Journal of Advances in Engineering Sciences

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The Buried Gate Mesfet with Turning on Characteristic


Affiliations
1 ECE, Sathyabama University, Chennai, India
2 VLSI Dept, Sathyabama University, Chennai, India
     

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The buried-gate GaAs MESFET with front illumination using turning ON channel current been analyzed by solving continuity equation. This analysis includes the ion implanted buried-gate process. At time 't' is equal to zero, the light through the optical fiber is turning 'ON' has been considered. The channel current has been evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for microwave communication.
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  • The Buried Gate Mesfet with Turning on Characteristic

Abstract Views: 254  |  PDF Views: 3

Authors

T. Jaya
ECE, Sathyabama University, Chennai, India
V. Kannan
VLSI Dept, Sathyabama University, Chennai, India

Abstract


The buried-gate GaAs MESFET with front illumination using turning ON channel current been analyzed by solving continuity equation. This analysis includes the ion implanted buried-gate process. At time 't' is equal to zero, the light through the optical fiber is turning 'ON' has been considered. The channel current has been evaluated and discussed. Buried-gate optical field effect transistor (OPFET) will be highly suitable for microwave communication.