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Dependence of Sheet Charge Density on Strain Relaxation and Material Composition for 2DEG


Affiliations
1 Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata - 700015, West Bengal, India
 

Sheet charge density of AlxGa1-xN/GaN 2DEG structure is analytically computed as a function of material composition. Strain relaxation factor, carrier concentration and quantized length of the well are also taken into account for computation purpose. Both spontaneous and piezoelectric polarizations are calculated as function of mole fraction and charge density is determined from the simulated findings. Results are important for calculating electrical characteristics of HEMT.

Keywords

Mole Fraction, Piezoelectric Polarization, Quantized Length, Sheet Charge Density, Sheet Resistance, Spontaneous Polarization, Strain Relaxation Factor.
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  • Dependence of Sheet Charge Density on Strain Relaxation and Material Composition for 2DEG

Abstract Views: 756  |  PDF Views: 356

Authors

Raj Kumar
Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata - 700015, West Bengal, India
Arpan Deyasi
Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata - 700015, West Bengal, India

Abstract


Sheet charge density of AlxGa1-xN/GaN 2DEG structure is analytically computed as a function of material composition. Strain relaxation factor, carrier concentration and quantized length of the well are also taken into account for computation purpose. Both spontaneous and piezoelectric polarizations are calculated as function of mole fraction and charge density is determined from the simulated findings. Results are important for calculating electrical characteristics of HEMT.

Keywords


Mole Fraction, Piezoelectric Polarization, Quantized Length, Sheet Charge Density, Sheet Resistance, Spontaneous Polarization, Strain Relaxation Factor.