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Indigenous Development of 320 x 256 Focal-Plane Array Using InAs/InGaAs/GaAs Quantum Dots-In-A-Well Infrared Detectors for Thermal Imaging


Affiliations
1 Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
2 Space Applications Centre, Indian Space Research Organisation, Ahmedabad 380 015, India
 

We report here the indigenous development of a 320 x 256 infrared focal-plane imager fabricated using an InAs quantum dots-in-a-well heterostructure, whose photoluminescence peak is at 1162 nm and activation energy is 187 meV. We discuss the fabrication and characterization of single-pixel detectors that can measure intersubband spectral responses with peak intensity at 9.3 μm. Using the fabricated device, infrared images were captured at 50-90 K. Device optimization led to approximately 95% of the pixels in the imaging array being operational and a reasonably low noise equivalent temperature of approximately 100 mK at 50-60 K.

Keywords

Focal-Plane Arrays, Infrared Detectors, Photoluminescence Peak, Quantum Dots, Thermal Imaging.
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  • Indigenous Development of 320 x 256 Focal-Plane Array Using InAs/InGaAs/GaAs Quantum Dots-In-A-Well Infrared Detectors for Thermal Imaging

Abstract Views: 360  |  PDF Views: 141

Authors

K. C. Goma Kumari
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
H. Ghadi
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
D. R. M. Samudraiah
Space Applications Centre, Indian Space Research Organisation, Ahmedabad 380 015, India
S. Chakrabarti
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India

Abstract


We report here the indigenous development of a 320 x 256 infrared focal-plane imager fabricated using an InAs quantum dots-in-a-well heterostructure, whose photoluminescence peak is at 1162 nm and activation energy is 187 meV. We discuss the fabrication and characterization of single-pixel detectors that can measure intersubband spectral responses with peak intensity at 9.3 μm. Using the fabricated device, infrared images were captured at 50-90 K. Device optimization led to approximately 95% of the pixels in the imaging array being operational and a reasonably low noise equivalent temperature of approximately 100 mK at 50-60 K.

Keywords


Focal-Plane Arrays, Infrared Detectors, Photoluminescence Peak, Quantum Dots, Thermal Imaging.

References





DOI: https://doi.org/10.18520/cs%2Fv112%2Fi07%2F1568-1573