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Indigenous Development of 320 x 256 Focal-Plane Array Using InAs/InGaAs/GaAs Quantum Dots-In-A-Well Infrared Detectors for Thermal Imaging


Affiliations
1 Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
2 Space Applications Centre, Indian Space Research Organisation, Ahmedabad 380 015, India
 

We report here the indigenous development of a 320 x 256 infrared focal-plane imager fabricated using an InAs quantum dots-in-a-well heterostructure, whose photoluminescence peak is at 1162 nm and activation energy is 187 meV. We discuss the fabrication and characterization of single-pixel detectors that can measure intersubband spectral responses with peak intensity at 9.3 μm. Using the fabricated device, infrared images were captured at 50-90 K. Device optimization led to approximately 95% of the pixels in the imaging array being operational and a reasonably low noise equivalent temperature of approximately 100 mK at 50-60 K.

Keywords

Focal-Plane Arrays, Infrared Detectors, Photoluminescence Peak, Quantum Dots, Thermal Imaging.
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  • Ryzhii, V., The theory of quantum-dot infrared phototransistors. Semicond. Sci. Technol., 1996, 11, 759–765.

  • Gunapala, S. D. et al., 640  512 pixels long-wavelength infrared (LWIR) quantum-dot infrared photodetector (QDIP) imaging focal plane array. IEEE J. Quant. Elecron., 2007, 43, 230–237.

  • Tsao, S., Lim, H., Zhang, W. and Razeghi, M., High operating temperature 320 x 256 middle-wavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot infrared photodetector. Appl. Phys. Lett., 2007, 90, 201109(1–3).

  • Jiang, J. et al., Demonstration of a 256 x 256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. Appl. Phys. Lett., 2004, 84, 2232–2234.

  • Williams, J. O., Metal organic chemical vapour deposition (MOCVD) for the preparation of semiconductor materials and devices. In Growth and Characterisation of Semiconductors (eds. Stradling, R. A. and Klipstein, P. C.), Adam Hilger, New York, 1990, pp. 17–33.

  • Lundstrom, M., III–V heterojunction bipolar transistors. In Heterojunction Transistors and Small Size Effects in Devices (ed. Willander, M.) Studentlitteratur, Sweden, 1992, pp. 35–46.

  • Foxon, C. T. and Joyce, B. A., Growth of thin films and heterostructures of III–V compounds by molecular beam epitaxy. In Growth and Characterisation of Semiconductors (eds Stradling, R. A. and Klipstein, P. C.), Adam Hilger, New York, 1990, pp. 35–64.

  • Stiff, A. D., Krishna, S., Bhattacharya, P. and Kennerly, S. W., Normal-incidence, high-temperature, mid-infrared, InAs–GaAs vertical quantum-dot infrared photodetector. IEEE J. Quant. Electron., 2001, 37, 1412–1419.

  • Andrews, J. R. et al., Comparison of quantum dots-in-a-doublewell and quantum dots-in-a-well focal plane arrays in the longwave infrared. IEEE Trans. Electron Dev., 2011, 58(7), 2022–2027.

  • Krishna, S., Quantum dots-in-a-well infrared photodetectors. J. Phys. D, 2005, 38, 2142–2150.

  • Broekaert, T. P. E. and Fonstad, C. G., AlAs etch-stop layers for InGaAlAs/InP heterostructure devices and circuits. IEEE Trans. Electron. Dev., 1992, 39(3, 533–536.

  • Andrews, J. R. et al., Comparison of quantum dots-in-a-well and quantum-well focal plane arrays in the long-wave infrared. IEEE Trans. Electron. Dev., 2009, 56(3), 512–516.


Abstract Views: 337

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  • Indigenous Development of 320 x 256 Focal-Plane Array Using InAs/InGaAs/GaAs Quantum Dots-In-A-Well Infrared Detectors for Thermal Imaging

Abstract Views: 337  |  PDF Views: 132

Authors

K. C. Goma Kumari
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
H. Ghadi
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
D. R. M. Samudraiah
Space Applications Centre, Indian Space Research Organisation, Ahmedabad 380 015, India
S. Chakrabarti
Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India

Abstract


We report here the indigenous development of a 320 x 256 infrared focal-plane imager fabricated using an InAs quantum dots-in-a-well heterostructure, whose photoluminescence peak is at 1162 nm and activation energy is 187 meV. We discuss the fabrication and characterization of single-pixel detectors that can measure intersubband spectral responses with peak intensity at 9.3 μm. Using the fabricated device, infrared images were captured at 50-90 K. Device optimization led to approximately 95% of the pixels in the imaging array being operational and a reasonably low noise equivalent temperature of approximately 100 mK at 50-60 K.

Keywords


Focal-Plane Arrays, Infrared Detectors, Photoluminescence Peak, Quantum Dots, Thermal Imaging.

References





DOI: https://doi.org/10.18520/cs%2Fv112%2Fi07%2F1568-1573