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A Comparative Study of CSA Design Using CNTFET and MOSFET


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1 Sathyabama University, Chennai, Tamilnadu, India
     

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This paper enumerates the design and analysis of a Carry Select Adder (CSA) using Full Adder cell. The Full Adder is designed using MOSFET 32nm model, Stanford University CNTFET model and proposed 10nm CNTFET model. There are many issues facing while integrating more number of transistors like short channel effect, power dissipation, scaling of the transistors. Inorder to overcome these problems and still reduce transistor size, Carbon Nano Tube Field Effect Transistors or CNTFETs have promising applications in the field of electronics. The carbon nanotube is emerging as a viable replacement to the MOSFET. The transient and power analyses in this paper are obtained with operating voltage at 0.9V. The simulation results are presented and the analyses are compared with circuits designed using 32nm MOSFET. The comparison of results indicated that the proposed 10nm CNTFET based design is more efficient in power savings and speed.

Keywords

CNT, CNTFET, Full Adder Cell, Carry Select Adder, Design Constraints, Circuit Simulation, CSA, 32nm, 10nm, Ballistic CNTFET Model, HSPICE, TSPICE.
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  • A Comparative Study of CSA Design Using CNTFET and MOSFET

Abstract Views: 419  |  PDF Views: 4

Authors

Vinith Zacharia Joshy
Sathyabama University, Chennai, Tamilnadu, India
T. Ravi
Sathyabama University, Chennai, Tamilnadu, India
V. Vijayakumar
Sathyabama University, Chennai, Tamilnadu, India

Abstract


This paper enumerates the design and analysis of a Carry Select Adder (CSA) using Full Adder cell. The Full Adder is designed using MOSFET 32nm model, Stanford University CNTFET model and proposed 10nm CNTFET model. There are many issues facing while integrating more number of transistors like short channel effect, power dissipation, scaling of the transistors. Inorder to overcome these problems and still reduce transistor size, Carbon Nano Tube Field Effect Transistors or CNTFETs have promising applications in the field of electronics. The carbon nanotube is emerging as a viable replacement to the MOSFET. The transient and power analyses in this paper are obtained with operating voltage at 0.9V. The simulation results are presented and the analyses are compared with circuits designed using 32nm MOSFET. The comparison of results indicated that the proposed 10nm CNTFET based design is more efficient in power savings and speed.

Keywords


CNT, CNTFET, Full Adder Cell, Carry Select Adder, Design Constraints, Circuit Simulation, CSA, 32nm, 10nm, Ballistic CNTFET Model, HSPICE, TSPICE.



DOI: https://doi.org/10.36039/ciitaas%2F4%2F6%2F2012%2F106922.248-252