Investigation on the Optical and Structural Properties of Thermally Evaporated Tin Selenide Thin Films for Phase Change Memory Application

Tin Selenide (SnSe) thin films have been deposited by thermal evaporation method on glass substrates under vacuum pressure of 10-6torr. Nitrogen gas flow rate was maintained as 3kg/cm3 in the chamber during evaporation. Structural and optical properties of these films were studied by different analytical techniques. X-Ray Diffraction studies have revealed that crystallinity has improved upon nitrogen introduction. The Optical studies revealed that these films possess the band gap of 1.87eV and 1.94eV for the as deposited and N doped films which will be suitable for fabrication flash memory devices.