Digital Signal Processing

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Effect of Underlap on Input Impedance, Gain and Noise Figure in FinFET Based LNA


Affiliations
1 Department of Information Technology, SSN College of Engineering, Kalavakkam-603110, Chennai, India
2 Department of Information Technology SSN College of Engineering, Kalavakkam-603110, Chennai, India
     

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The effect of gate-drain/source underlap (Lun) on a narrow band LNA performance has been studied in 30 nm FinFET using device and mixed mode simulations. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used as performance metrics. To get the better noise performance and gain, Lun in the range of 3-5nm is recommended.

Keywords

FinFET, Ft, Gm, Lun, LNA.
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  • Effect of Underlap on Input Impedance, Gain and Noise Figure in FinFET Based LNA

Abstract Views: 201  |  PDF Views: 2

Authors

N. Vinodhkumar
Department of Information Technology, SSN College of Engineering, Kalavakkam-603110, Chennai, India
K. K. Nagarajan
Department of Information Technology, SSN College of Engineering, Kalavakkam-603110, Chennai, India
R. Srinivasan
Department of Information Technology SSN College of Engineering, Kalavakkam-603110, Chennai, India

Abstract


The effect of gate-drain/source underlap (Lun) on a narrow band LNA performance has been studied in 30 nm FinFET using device and mixed mode simulations. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used as performance metrics. To get the better noise performance and gain, Lun in the range of 3-5nm is recommended.

Keywords


FinFET, Ft, Gm, Lun, LNA.