Performance of ION/IOFF Ratio Based on Epitaxial Graphene on Sic by Field-Effect Transistors Model

The physical and electrical properties of graphene have motivated a significant amount research for various applications. Graphene is pure carbon in the form of a very thin, nearly transparent sheet, one atom thick. It is remarkably strong for its very low weight (100 times stronger than steel) and it conducts heat and electricity with great efficiency. In recent experiments, epitaxial graphene on SiC substrate proves to be the best channel material for FETs, which provides a semiconducting bandgap of 0.26ev. Epitaxial graphene on SiC exhibits a wider gap than other alternative options such as bilayer graphene. Lithography need not required and is performed in 2-D. A model is analyzed based on graphene on SiC which provides good performance of a nanoscale FET. The analyzed model provides the way to the design parameter space. Current can be modulated by four means of magnitude. An Ion/Ioff ratio of 50 and a subthreshold slope of 145mV/dec can be obtained with a supply voltage of 0.25 V which shows a significant progress toward solid-state integration of graphene electronics.