Digital Signal Processing

N. Vinodhkumar ¹, K. K. Nagarajan ¹, R. Srinivasan ²

Affiliations
1 Department of Information Technology, SSN College of Engineering, Kalavakkam-603110, Chennai, IN
2 Department of Information Technology SSN College of Engineering, Kalavakkam-603110, Chennai, IN

Abstract

The effect of gate-drain/source underlap (Lun) on a narrow band LNA performance has been studied in 30 nm FinFET using device and mixed mode simulations. LNA circuit with two transistors in a cascode arrangement is constructed and the input impedance, gain and noise-figure have been used as performance metrics. To get the better noise performance and gain, Lun in the range of 3-5nm is recommended.

Keywords

FinFET, Ft, Gm, Lun, LNA.

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