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Baskaran, S.
- Inverted InAlAs/InGaAs MOSHEMT with Nanoscale Gate Length for Terahertz Applications
Abstract Views :158 |
PDF Views:2
Authors
Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN
Source
Digital Signal Processing, Vol 7, No 3 (2015), Pagination: 73-76Abstract
A 650nm gate-length device exhibited a high drive current at low Vds, with an ultra-low on-resistance. A high peak effective mobility is also going to extracted, indicating excellent electron transport properties. Selectively regrown n++ In0.53Ga0.47 As source/drain by MOCVD was incorporated in inverted-type InAlAs/InGaAs MOSHEMTs on GaAs substrates. The thermal stability of the inverted epitaxial HEMT structure after source/drain regrowth was investigated using Van der Pauw Hall measurements.Keywords
Inversion Channel InAlAs/InGaAs MOSHEMT, Selective Growth, On-Current, Effective Mobility, Low On-Resistance, High Current.
- Quaternary InALGan Double Heterostructure with Dual Channel for Higher Power and Frequency Applications
Abstract Views :176 |
PDF Views:2
Authors
S. Tamilvanan
1,
S. Baskaran
2
Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, IN
2 Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, IN