CNTFET Based SR Flip Flop

Carbon Nanotube Field Effect Transistors (CNTFET) are new nano-scaled devices to replace the MOSFET in nano-scale range to provide high performance, very dense and low power circuits. Small size of the MOSFET, below a few tens of nanometres creates the low Trans-conductance, gate oxide leakage, low ON-current, Mobility degradation and increased delay. Problems observed in the MOSFET when size is reduced are avoided in CNTFET, In case of CNTFET carbon nanotube is used as channel and high-k material is used as gate dielectric. In this paper, we present the simulation results of semi-conducting Carbon Nanotube Field Effect Transistors based logic gates and SR Flip Flop. The simulation is done using HSPICE and the current conduction of CNTFET is also analysed.