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Level Shifter Design for Low Power Applications


Affiliations
1 Department of Electronics and Communication Engineering, Guru Jambheshwar University of Science and Technology, Hisar, India
2 Amity University, Noida, India
 

With scaling of Vt sub-threshold leakage power is increasing and expected to become significant part of total power consumption.In present work three new configurations of level shifters for low power application in 0.35μm technology have been presented. The proposed circuits utilize the merits of stacking technique with smaller leakage current and reduction in leakage power. Conventional level shifter has been improved by addition of three NMOS transistors, which shows total power consumption of 402.2264pW as compared to 0.49833nW with existing circuit. Single supply level shifter has been modified with addition of two NMOS transistors that gives total power consumption of 108.641pW as compared to 31.06nW. Another circuit, contention mitigated level shifter (CMLS) with three additional transistors shows total power consumption of 396.75pW as compared to 0.4937354nW. Three proposed circuit's shows better performance in terms of power consumption with a little conciliation in delay. Output level of 3.3V has been obtained with input pulse of 1.6V for all proposed circuits.

Keywords

CMOS, Delay, Level Shifter, Power Consumption and Stacking Technique.
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  • Level Shifter Design for Low Power Applications

Abstract Views: 369  |  PDF Views: 164

Authors

Manoj Kumar
Department of Electronics and Communication Engineering, Guru Jambheshwar University of Science and Technology, Hisar, India
Sandeep K. Arya
Department of Electronics and Communication Engineering, Guru Jambheshwar University of Science and Technology, Hisar, India
Sujata Pandey
Amity University, Noida, India

Abstract


With scaling of Vt sub-threshold leakage power is increasing and expected to become significant part of total power consumption.In present work three new configurations of level shifters for low power application in 0.35μm technology have been presented. The proposed circuits utilize the merits of stacking technique with smaller leakage current and reduction in leakage power. Conventional level shifter has been improved by addition of three NMOS transistors, which shows total power consumption of 402.2264pW as compared to 0.49833nW with existing circuit. Single supply level shifter has been modified with addition of two NMOS transistors that gives total power consumption of 108.641pW as compared to 31.06nW. Another circuit, contention mitigated level shifter (CMLS) with three additional transistors shows total power consumption of 396.75pW as compared to 0.4937354nW. Three proposed circuit's shows better performance in terms of power consumption with a little conciliation in delay. Output level of 3.3V has been obtained with input pulse of 1.6V for all proposed circuits.

Keywords


CMOS, Delay, Level Shifter, Power Consumption and Stacking Technique.