ICTACT Journal on Communication Technology

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Absorptive Optical Bistability in Hybrid Laser Structure


Affiliations
1 School of Photonics Science, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan- Gwagiro (Oryong-dong), Buk-gu, Gwangju, 500-712, Korea, Democratic People's Republic of
2 Department of Electronics and Communication, Amrita School of Engineering, Kasavanahalli, Bangalore, India
     

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A hybrid bistable semiconductor laser structure consisting of an edge emitting laser as a gain region and a vertical cavity laser as an absorber region, which translates lateral emission to vertical emission is analyzed. The device is modeled using appropriately modified rate equations and simulated using PSPICE circuit simulator. The dc sweep exhibits bistability. The hysterisis width of the bistable characteristics is found to depend on the reverse dc sweep, source resistance, and temperature. It is also noticed that the threshold currents and the hysterisis width can be controlled by the physical dimensions of gain and absorber regions and the driver circuit parameters. Turn-on delay decreases as the input current is increased.

Keywords

Optical Bistability, Edge Emitting Laser, Vertical Cavity Laser, Threshold Current, Hysteresis Width.
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  • Absorptive Optical Bistability in Hybrid Laser Structure

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Authors

Tan Chee Leong
School of Photonics Science, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan- Gwagiro (Oryong-dong), Buk-gu, Gwangju, 500-712, Korea, Democratic People's Republic of
Pukhraj Vaya
Department of Electronics and Communication, Amrita School of Engineering, Kasavanahalli, Bangalore, India

Abstract


A hybrid bistable semiconductor laser structure consisting of an edge emitting laser as a gain region and a vertical cavity laser as an absorber region, which translates lateral emission to vertical emission is analyzed. The device is modeled using appropriately modified rate equations and simulated using PSPICE circuit simulator. The dc sweep exhibits bistability. The hysterisis width of the bistable characteristics is found to depend on the reverse dc sweep, source resistance, and temperature. It is also noticed that the threshold currents and the hysterisis width can be controlled by the physical dimensions of gain and absorber regions and the driver circuit parameters. Turn-on delay decreases as the input current is increased.

Keywords


Optical Bistability, Edge Emitting Laser, Vertical Cavity Laser, Threshold Current, Hysteresis Width.