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Drain Current Characteristics of Silicon Nanowire Field Effect Transistor


Affiliations
1 Department of Electronics and Communication Engineering, National Engineering College, Kovilpatti, India
     

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This paper presents the simulation study of characteristics of an 11nm Silicon Nanowire Field Effect Transistor. This architecture is applicable for ultra-scaled devices up to sub-11 nm technology nodes that employ silicon films of a few nm in thickness. The defining characteristics of ultrathin silicon devices such as Short Channel Effects and Quasi-Ballistic transport are considered in modelling the device. Device geometries play a very important role in short channel devices, and hence their impact on drain current is also analyzed by varying the silicon and oxide thickness. The proposed simulation model gives a detailed outlook on the characteristics of the nanowire device in the inversion regime.

Keywords

Nanowire Transistors, Drain Current Characteristics.
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  • Drain Current Characteristics of Silicon Nanowire Field Effect Transistor

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Authors

T. S. Arun Samuel
Department of Electronics and Communication Engineering, National Engineering College, Kovilpatti, India
N. Arumugam
Department of Electronics and Communication Engineering, National Engineering College, Kovilpatti, India
A. Shenbagavalli
Department of Electronics and Communication Engineering, National Engineering College, Kovilpatti, India

Abstract


This paper presents the simulation study of characteristics of an 11nm Silicon Nanowire Field Effect Transistor. This architecture is applicable for ultra-scaled devices up to sub-11 nm technology nodes that employ silicon films of a few nm in thickness. The defining characteristics of ultrathin silicon devices such as Short Channel Effects and Quasi-Ballistic transport are considered in modelling the device. Device geometries play a very important role in short channel devices, and hence their impact on drain current is also analyzed by varying the silicon and oxide thickness. The proposed simulation model gives a detailed outlook on the characteristics of the nanowire device in the inversion regime.

Keywords


Nanowire Transistors, Drain Current Characteristics.