ICTACT Journal on Microelectronics

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Impact Of Silicon Thickness On Electrical Performance Of Solar Cell In Submicron Technology


Affiliations
1 Department of Electrical Engineering, Ecole Nationale Polytechnique d’Oran Maurice Audin, Albania
2 Department of Electrical Engineering, University of Mascara, Albania
3 Department of Networking and Telecommunications, University of Rouen, France
     

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In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.

Keywords

In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.
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  • Impact Of Silicon Thickness On Electrical Performance Of Solar Cell In Submicron Technology

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Authors

Mourad Hebali
Department of Electrical Engineering, Ecole Nationale Polytechnique d’Oran Maurice Audin, Albania
Mohammed Barka
Department of Electrical Engineering, University of Mascara, Albania
Abdelkader Baghdad Bey
Department of Electrical Engineering, University of Mascara, Albania
Miloud Abboun Abid
Department of Electrical Engineering, Ecole Nationale Polytechnique d’Oran Maurice Audin, Albania
Mohammed Benzohra
Department of Networking and Telecommunications, University of Rouen, France
Djilali Chalabi
Department of Electrical Engineering, Ecole Nationale Polytechnique d’Oran Maurice Audin, Albania
Abdelkader Saïdane
Department of Electrical Engineering, Ecole Nationale Polytechnique d’Oran Maurice Audin, Albania

Abstract


In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.

Keywords


In the field of new technologies for energy, solar photovoltaic in submicron technology is becoming an axis of development industrially important. In this paper, we present the results of the study of the influence of silicon thickness TSi on the characteristics of a solar cell based to silicon and in submicron technology using the 2D-Atlas SILVACO software. We simulate the Current-Voltage (I-V) and Power-Voltage (P-V) characteristics as a function of silicon thickness in the range of 120nm to 900nm at room temperature and under global AM1.5G illumination spectra. Then we calculate the values of the form factor FF for the different values of the silicon thickness. The simulation results show that the solar cell in silicon without defect and in submicron technology is characterized by good electrical characteristics and high performance.