ICTACT Journal on Microelectronics

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Design and Analysis of InP and GaAs Double Gate MOSFET Transistors for Low Power Applications


Affiliations
1 Department of Electronics and Communication Engineering, National Engineering College, India
2 Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, India
     

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This paper deals with a novel Double Gate MOSFET (DG MOSFET) which is constructed by the unification of III group materials (Indium, Gallium) and V group materials (Phosphide, Arsenide) is analyzed. Due to its short channel effect immunization, leakage current reduction and higher scaling potential, DG MOSFET as one of the most comforting devices for low power applications. In this work, we investigated the effect of DG MOSFET based on Indium Phosphide (InP) and Gallium Arsenide (GaAs) on optimal performance and drain current characteristics by replacing traditional DG MOSFET based on silicon. The transistor’s channel length is set to 20 nm. Both devices have been modeled using the NanoHub simulator and characteristics has been examined using Matlab. The descriptive analysis of characteristics has been performed through the corresponding plot structures - energy band structure, ID vs VGS characteristics, ID vs VGS characteristics, transconductance. From the results provided, it has been found that the DG MOSFET device based on InP offers ON current 10-3A is better than the DG MOSFET device based on Silicon and Gallium Arsenide (GaAs).

Keywords

DG MOSFET, GaAs, InP, ON Current, OFF Current.
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  • Design and Analysis of InP and GaAs Double Gate MOSFET Transistors for Low Power Applications

Abstract Views: 191  |  PDF Views: 0

Authors

A. Sharon Geege
Department of Electronics and Communication Engineering, National Engineering College, India
P. Vimala
Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, India
T. S. Arun Samuel
Department of Electronics and Communication Engineering, National Engineering College, India
N. Arumugam
Department of Electronics and Communication Engineering, National Engineering College, India

Abstract


This paper deals with a novel Double Gate MOSFET (DG MOSFET) which is constructed by the unification of III group materials (Indium, Gallium) and V group materials (Phosphide, Arsenide) is analyzed. Due to its short channel effect immunization, leakage current reduction and higher scaling potential, DG MOSFET as one of the most comforting devices for low power applications. In this work, we investigated the effect of DG MOSFET based on Indium Phosphide (InP) and Gallium Arsenide (GaAs) on optimal performance and drain current characteristics by replacing traditional DG MOSFET based on silicon. The transistor’s channel length is set to 20 nm. Both devices have been modeled using the NanoHub simulator and characteristics has been examined using Matlab. The descriptive analysis of characteristics has been performed through the corresponding plot structures - energy band structure, ID vs VGS characteristics, ID vs VGS characteristics, transconductance. From the results provided, it has been found that the DG MOSFET device based on InP offers ON current 10-3A is better than the DG MOSFET device based on Silicon and Gallium Arsenide (GaAs).

Keywords


DG MOSFET, GaAs, InP, ON Current, OFF Current.