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Trap Charges Induced Immunity in Dual Metal Gate (DMG) Junctionless Accumulation Mode (JAM) Nanowire FET (NWFET)


Affiliations
1 Department of Electronics and Communication Engineering, Maharshi Dayanand University, India
     

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In this brief, we have done a comparative study of Single Metal Gate Junctionless Accumulation Mode Nanowire FET (SMG-JAM-NWFET) and Dual Metal Gate Junctionless Accumulation Mode Nanowire FET (DMG-JAM-NWFET) for their immunity against the trap induced charges. It is so found that the DMG-JAM-NWFET poses much higher immunity against the trap charges as compared to the conventional SMG-JAM-NWFET in terms of much lower change in the potential, current, transconductance and output conductance. Aberration in other parameters like drain characteristics, Subthreshold Slope, capacitances and cut-off frequency has also been studied deeply. It is so found that the DMG-JAM-NWFET poses much higher immunity against the trap charges as compared to the conventional SMG-JAM-NWFET in terms of much lower change in the aforesaid parameters. It is so because of the impact ionization effect, the resistance to trap charges in DMG-JAM-NWFET is much higher than SMG-JAM-NWFET.

Keywords

Immunity, Trap Charges, Junctionless Accumulation Mode, Drain Current, Transconductance Nanowire FET.
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  • Trap Charges Induced Immunity in Dual Metal Gate (DMG) Junctionless Accumulation Mode (JAM) Nanowire FET (NWFET)

Abstract Views: 273  |  PDF Views: 0

Authors

Deepak Kumar
Department of Electronics and Communication Engineering, Maharshi Dayanand University, India
Shamsher Singh
Department of Electronics and Communication Engineering, Maharshi Dayanand University, India

Abstract


In this brief, we have done a comparative study of Single Metal Gate Junctionless Accumulation Mode Nanowire FET (SMG-JAM-NWFET) and Dual Metal Gate Junctionless Accumulation Mode Nanowire FET (DMG-JAM-NWFET) for their immunity against the trap induced charges. It is so found that the DMG-JAM-NWFET poses much higher immunity against the trap charges as compared to the conventional SMG-JAM-NWFET in terms of much lower change in the potential, current, transconductance and output conductance. Aberration in other parameters like drain characteristics, Subthreshold Slope, capacitances and cut-off frequency has also been studied deeply. It is so found that the DMG-JAM-NWFET poses much higher immunity against the trap charges as compared to the conventional SMG-JAM-NWFET in terms of much lower change in the aforesaid parameters. It is so because of the impact ionization effect, the resistance to trap charges in DMG-JAM-NWFET is much higher than SMG-JAM-NWFET.

Keywords


Immunity, Trap Charges, Junctionless Accumulation Mode, Drain Current, Transconductance Nanowire FET.

References