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Design of Single Pole Bulk Micromachined High Depth Cavity Filter


Affiliations
1 Nanotechnology Group Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan, India
 

This paper presents modelling, design and fabrication scheme of a 12 GHz silicon micromachined cavity filter for high unloaded quality factor (Qu. Bulk micromachining and wafer bonding techniques are adopted for realization of the structures. Cavities are formed on 1000 μm thick high resistivity waferusing Tetramethyl Ammonium Hydroxide (TMAH) followed by gold electroplating. RF feed is provided to the cavity through metal transmission lines and slot apertures on standard high resistivity Si wafer. The simulated results show a return loss of -37.30dB, insertion loss of -0.16dB and unloaded quality factor of 300.

Keywords

Cavity Filter, Unloaded Quality Factor, Etching, Micromachined Cavities, TMAH.
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  • Design of Single Pole Bulk Micromachined High Depth Cavity Filter

Abstract Views: 242  |  PDF Views: 2

Authors

Neha Shukla
Nanotechnology Group Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan, India
K. Maninder
Nanotechnology Group Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan, India
Deepak Bansal
Nanotechnology Group Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan, India
K. J. Rangra
Nanotechnology Group Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute (CSIR-CEERI), Pilani, Rajasthan, India

Abstract


This paper presents modelling, design and fabrication scheme of a 12 GHz silicon micromachined cavity filter for high unloaded quality factor (Qu. Bulk micromachining and wafer bonding techniques are adopted for realization of the structures. Cavities are formed on 1000 μm thick high resistivity waferusing Tetramethyl Ammonium Hydroxide (TMAH) followed by gold electroplating. RF feed is provided to the cavity through metal transmission lines and slot apertures on standard high resistivity Si wafer. The simulated results show a return loss of -37.30dB, insertion loss of -0.16dB and unloaded quality factor of 300.

Keywords


Cavity Filter, Unloaded Quality Factor, Etching, Micromachined Cavities, TMAH.