Invertis Journals of Science & Technology

Open Access Open Access  Restricted Access Subscription Access

Temperature Dependent Electrical Characteristics of PEDOT:PSS/n-Si Heterojunction Diode


Affiliations
1 Department of Physics, Indian Institute of Technology, New Delhi-110016, India
 

We fabricate PEDOT:PSS/n-Si heterojunction diode by deposition of Poly (3,4-ethylenedioxythiophene)- poly (styrenesulfonate) (PEDOT:PSS) on n-type Si wafer using spin coating process. In this study, temperature dependent electrical properties of the diode were investigated. This heterojunction diode showed a good quality rectifying behavior. It was found that the ideality factor increases and barrier height decreases with decrease in temperature. Such a behavior is attributed to barrier inhomogeneities. Resistivity measurements showed that resistivity decreases with increasing temperature.

Keywords

PEDOT:PSS, Heterojunction, Ideality Factor.
User
Notifications
Font Size

Abstract Views: 168

PDF Views: 2




  • Temperature Dependent Electrical Characteristics of PEDOT:PSS/n-Si Heterojunction Diode

Abstract Views: 168  |  PDF Views: 2

Authors

C. S. Pathak
Department of Physics, Indian Institute of Technology, New Delhi-110016, India
J. P. Singh
Department of Physics, Indian Institute of Technology, New Delhi-110016, India
R. Singh
Department of Physics, Indian Institute of Technology, New Delhi-110016, India

Abstract


We fabricate PEDOT:PSS/n-Si heterojunction diode by deposition of Poly (3,4-ethylenedioxythiophene)- poly (styrenesulfonate) (PEDOT:PSS) on n-type Si wafer using spin coating process. In this study, temperature dependent electrical properties of the diode were investigated. This heterojunction diode showed a good quality rectifying behavior. It was found that the ideality factor increases and barrier height decreases with decrease in temperature. Such a behavior is attributed to barrier inhomogeneities. Resistivity measurements showed that resistivity decreases with increasing temperature.

Keywords


PEDOT:PSS, Heterojunction, Ideality Factor.