Invertis Journals of Science & Technology

C. S. Pathak ¹, J. P. Singh ¹, R. Singh ¹

Affiliations
1 Department of Physics, Indian Institute of Technology, New Delhi-110016, IN

Abstract

We fabricate PEDOT:PSS/n-Si heterojunction diode by deposition of Poly (3,4-ethylenedioxythiophene)- poly (styrenesulfonate) (PEDOT:PSS) on n-type Si wafer using spin coating process. In this study, temperature dependent electrical properties of the diode were investigated. This heterojunction diode showed a good quality rectifying behavior. It was found that the ideality factor increases and barrier height decreases with decrease in temperature. Such a behavior is attributed to barrier inhomogeneities. Resistivity measurements showed that resistivity decreases with increasing temperature.

Keywords

PEDOT:PSS, Heterojunction, Ideality Factor.

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