Invertis Journals of Science & Technology

Rakesh Prasher ¹, Devi Dass ¹, Rakesh Vaid ¹

Affiliations
1 Department of Physics and Electronics, University of Jammu, Jammu-180006, IN

Abstract

In this paper we have compared 1 nm diameter Indium Arsenide and Indium Antimonide based nanowire MOSFET with 1 nm diameter Silicon based nanowire MOSFET (Si-NWMOSFET), both gives excellent on and off characteristics than Si-NWMOSFET. The device metrics considered at the nanometer scale are Subthreshold swing (S), Drain Induced Barrier Lowering (DIBL), On and Off current, Carrier Injection Velocity (vinj) etc. The results advise us that InSb and InAs channeled Nanowire MOSFET has the highest Ion and lowest Ioff values. Besides, InSb NWMOSFET has the highest values for Ion/I off ratio, vinj, transconductance (gm) and improved short channel effect (S = 59.82 and DIBL = 0.84 both values is very closed to ideal condition). More results such as effect of quantum capacitance vs. Vgs, Ids vs. Vgs-Vds, gm/Id vs. Vgs, average velocity vs. Vg, DIBL and Subthreshold Slope (SS) for three different NWMOSFETs has been investigated. Results obtained suggest that InSb and InAs nanowire channels appear to be applicable for high performance logic and even low operating power requirements.

Keywords

Indium Antimonide, Indium Arsenide, Nanowire MOSFET, DIBL, Subthreshold Slope, Transconductance.

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Deepti Sharma ¹, Rakesh Vaid ²

Affiliations
1 Department of Physics and Electronics, University of Jammu-180006, IN
2 Department of Physics and Electronics, University of Jammu, 180006, IN

Abstract

In this paper, we propose a new SJMOSFET (Super junction MOSFET) with buried oxide in its drift region. The proposed device is simulated using PISCES-II, a 2-D numerical device simulator. The results show an improvement in the breakdown performance as compared to the conventional SJMOSFET due to a reduction in the vertical electric field. In addition, the proposed device i.e. in NBOX1-SJMOSFET shows a linear relation between the B_v and R_on as compared to the conventional device. Various results obtained reveal that the device having BOX in the n-pillar gives the better results. The breakdown voltage has been increased by about 20.439% in NBOX1-SJMOSFET leading to improvement in various other performance parameters with BOX in the n-pillar as compared to BOX in the p-pillar and conventional device.

Keywords

Superjunction (Sjmosfet), Breakdown Voltage (B_v), Buried Oxide (Box), On-Resistance (R_on), Power Mosfet, Device Simulation.

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