Open Access Open Access  Restricted Access Subscription Access
Open Access Open Access Open Access  Restricted Access Restricted Access Subscription Access

Nano-Patterning of 16-MHA over Palladium Substrate Using Dip-Pen Nano-Lithography (DPN)


Affiliations
1 CSIR-Central Electronics Engineering Research Institute, Pilani, India
     

   Subscribe/Renew Journal


In this paper, the nanowriting process over palladium substrate with 16-MHA ink has been established using Dip-Pen Nanolithography. For nanowriting, the substrate was fabricated with very low rms roughness (˜0.64nm) using e-beam deposition technique. After ink calibration, the lines and dots were fabricated with 5mM ink of 16-MHA. The width/diameter estimation of patterns was done in NanoRule image analysis software. The effect of humidity along with varying speed/dwell time is also demonstrated and results are explained in detail. The measured minimum line width ˜269nm and dot diameter ˜602 nm was successfully achieved. These SAM patterns could be very useful for positioning of carbon nanotubes (CNTs). The low contact resistance of Pd with CNTs would also be an additional advantage.

Keywords

Dip-Pen Nanolithography (DPN), Self-Assembled Monolayer (SAM), 16-MHA, Nano-Patterning, Nano-Writing.
User
Subscription Login to verify subscription
Notifications
Font Size

Abstract Views: 206

PDF Views: 1




  • Nano-Patterning of 16-MHA over Palladium Substrate Using Dip-Pen Nano-Lithography (DPN)

Abstract Views: 206  |  PDF Views: 1

Authors

Amit Kumar Goyal
CSIR-Central Electronics Engineering Research Institute, Pilani, India
Pankaj B. Agarwal
CSIR-Central Electronics Engineering Research Institute, Pilani, India

Abstract


In this paper, the nanowriting process over palladium substrate with 16-MHA ink has been established using Dip-Pen Nanolithography. For nanowriting, the substrate was fabricated with very low rms roughness (˜0.64nm) using e-beam deposition technique. After ink calibration, the lines and dots were fabricated with 5mM ink of 16-MHA. The width/diameter estimation of patterns was done in NanoRule image analysis software. The effect of humidity along with varying speed/dwell time is also demonstrated and results are explained in detail. The measured minimum line width ˜269nm and dot diameter ˜602 nm was successfully achieved. These SAM patterns could be very useful for positioning of carbon nanotubes (CNTs). The low contact resistance of Pd with CNTs would also be an additional advantage.

Keywords


Dip-Pen Nanolithography (DPN), Self-Assembled Monolayer (SAM), 16-MHA, Nano-Patterning, Nano-Writing.