Pulsed Laser Deposition of SiC thin Film and Characterisation

PLD technique for depositing SiC on Si (100) substrates using Nd3+:YAG laser at 355 nm is studied. Influence of substrate temperature and pressure on both structure and morphology of SiC thin film is investigated. Multicrystalline SiC film is be obtained with temperature ranging from 600°C to 700°C and at an ambient pressure of about 5.5×10^-3 Pa. Micro crack formation was observed on deposited SiC films on alkali-free glass substrates. Nevertheless, no such formation was observed when SiC films were deposited on Si substrates. Further, droplet formation on the deposited film was reduced significantly when the grit count of SiC powder was increased. The X-ray diffraction (XRD) and the Raman spectroscopy studies on deposited films clearly show multicrystalline (combined 3C-SiC and 4H-SiC) nature of SiC films. I-V characteristics of the thin film of SiC on Si studies shows the characteristics same as p-n diode characteristics.