Modification of Distributions of Concentrations Dopants during Overgrowth of Infused-Junction and Implanted-Junction Rectifiers

In this paper we consider influence of overgrowth of doped areas of heterostructures on distributions of concentrations of dopants. The doping has been done by diffusion or ion implantation. Several conditions to increase sharpness of p-n-junctions (single and framework bipolar transistors) have been formulated framework technological process. At the same time we analyzed influence of speed of overgrowth of doped areas and mechanical stress in the considered heterostructures on distribution of concentrations of dopants in the structure.