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On Optimization of Manufacturing of Amulti-Level Invertor to Increase Density of Elements


Affiliations
1 Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russian Federation
2 Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Ilinsky street, Nizhny Novgorod, 603950, Russian Federation
 

In this paper we introduce an approach to increase integration rate of elements in a three level invertor. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.
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  • On Optimization of Manufacturing of Amulti-Level Invertor to Increase Density of Elements

Abstract Views: 203  |  PDF Views: 5

Authors

E. L. Pankratov
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950, Russian Federation
E. A. Bulaeva
Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Ilinsky street, Nizhny Novgorod, 603950, Russian Federation

Abstract


In this paper we introduce an approach to increase integration rate of elements in a three level invertor. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.