Open Access Open Access  Restricted Access Subscription Access

Ferroelectricity in Memory Devices


Affiliations
1 Department of YCoE, Punjabi University, Guru Kashi Campus, Talwandi Sabo (Bathinda), India
 

Ferroelectrics are characterized by spontaneous polarization, the direction of which can be reversed by an external electric field. These two states of spontaneous polarization are used as the logic states of a memory device that does not require power backup to maintain the stored information. The basic physics, properties and the role of ferroelectric materials as non-volatile memory devices is discussed.

Keywords

Ferroelectric, Polarization, Non-Volatile, Feram, Hysteresis Loop.
User
Notifications
Font Size

Abstract Views: 195

PDF Views: 1




  • Ferroelectricity in Memory Devices

Abstract Views: 195  |  PDF Views: 1

Authors

Baljinder Kaur
Department of YCoE, Punjabi University, Guru Kashi Campus, Talwandi Sabo (Bathinda), India
Lakhbir Singh
Department of YCoE, Punjabi University, Guru Kashi Campus, Talwandi Sabo (Bathinda), India

Abstract


Ferroelectrics are characterized by spontaneous polarization, the direction of which can be reversed by an external electric field. These two states of spontaneous polarization are used as the logic states of a memory device that does not require power backup to maintain the stored information. The basic physics, properties and the role of ferroelectric materials as non-volatile memory devices is discussed.

Keywords


Ferroelectric, Polarization, Non-Volatile, Feram, Hysteresis Loop.