Open Access
Subscription Access
Ferroelectricity in Memory Devices
Ferroelectrics are characterized by spontaneous polarization, the direction of which can be reversed by an external electric field. These two states of spontaneous polarization are used as the logic states of a memory device that does not require power backup to maintain the stored information. The basic physics, properties and the role of ferroelectric materials as non-volatile memory devices is discussed.
Keywords
Ferroelectric, Polarization, Non-Volatile, Feram, Hysteresis Loop.
User
Font Size
Information
Abstract Views: 209
PDF Views: 1