Research Cell: An International Journal of Engineering Sciences

Jashangeet Kaur ¹, Ankush ¹, Kanika ¹, Manoj Bali ², Manish Dev Sharma ³, Navdeep Goyal ³

Affiliations
1 Department of Physics, Centre of Advanced Study in Physics, Panjab University, Chandigarh, IN
2 B.H.S.B.I.E.T., Maharaja Ranjeet Singh State Technical University, Lehragaga, Sangrur, IN
3 Department of Physics, Centre of Advanced Study in Physics, Panjab University, Chandigar, IN

Abstract

Ge-Sb-Te(GST) has gathered immense interest in memory applications due to its modifiable physical and electrical properties.A phase change memory (PCM) cell made up of pure GST has better data retention, switching speed and power consumption than conventional storage devices. A further improvement in these properties can be accomplished by doping with various elements. To comprehend the present scenario of GSTbased phase change memories, it is vital to know about the doping trends. Foreign elements engineer the material properties to produce a PCM device with better physical and electrical properties. This manuscript constructs a comparison of various elements which will serve as a key in research while determining the most advantageous impurity. C, N, O, Si, Se and some transition metals are also examined. A tabular illustration yields correlated effects on physical and electrical properties of dopants on pure GST. Suggestions for future advancements are also specified and substantial conclusions are inferred from the literature review.

Keywords

Phase Change Memory, Gesbte, Chalcogenides, Dopant Effect, Material Properties.

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