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Effect of Geometrical and Physical parameters of AlGaN/GaN HEMT on the electrical characteristics with AlN spacer layer


Affiliations
1 Faculty of Science and Technology, Tissemsilt University, Algeria
2 Laboratoire de Micro-électronique Appliquée. Université Djillali Liabès de Sidi Bel Abbés, BP 89, 22000, Sidi Bel Abbés, Algeria
 

The goal of this manuscript is to use the Silvaco Atlas TCAD simulator to investigate the effect of some parameters on the current-voltage characteristics of a high-electronmobility transistors devices based on AlxGa1-xN/GaN, Advanced AlxGa1-xN/AlN/GaN heterostructures with GaN channel layer and AlN spacer layer. It is demonstrated that numerical simulation can be used effectively in the development of HEMTs. We looked into the effect of the GaN thickness layer on the current-voltage characteristics, as well as the effect of the δ -doped layer within AlxGa1-xN barrier layer, the effect of the spacer thickness is also considered. Among the sample structures we used for our computations, our calculations reveal a low threshold voltage value and the maximum transconductance. Our structure with GaN channel layer thickness of 200 nm, Al content of x = 0.2 with a δ -doped layer of n = 5 x 1018 cm -3 , we find that the maximum saturation current.

Keywords

: Silvaco Atlas TCAD, AlxGa1−xN/GaN,δ-doped layer,HEMTs, AlN .
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  • Effect of Geometrical and Physical parameters of AlGaN/GaN HEMT on the electrical characteristics with AlN spacer layer

Abstract Views: 187  |  PDF Views: 100

Authors

Abdelmalek Douara
Faculty of Science and Technology, Tissemsilt University, Algeria
Abdelaziz
Laboratoire de Micro-électronique Appliquée. Université Djillali Liabès de Sidi Bel Abbés, BP 89, 22000, Sidi Bel Abbés, Algeria
Mostefa Hamdani
Faculty of Science and Technology, Tissemsilt University, Algeria

Abstract


The goal of this manuscript is to use the Silvaco Atlas TCAD simulator to investigate the effect of some parameters on the current-voltage characteristics of a high-electronmobility transistors devices based on AlxGa1-xN/GaN, Advanced AlxGa1-xN/AlN/GaN heterostructures with GaN channel layer and AlN spacer layer. It is demonstrated that numerical simulation can be used effectively in the development of HEMTs. We looked into the effect of the GaN thickness layer on the current-voltage characteristics, as well as the effect of the δ -doped layer within AlxGa1-xN barrier layer, the effect of the spacer thickness is also considered. Among the sample structures we used for our computations, our calculations reveal a low threshold voltage value and the maximum transconductance. Our structure with GaN channel layer thickness of 200 nm, Al content of x = 0.2 with a δ -doped layer of n = 5 x 1018 cm -3 , we find that the maximum saturation current.

Keywords


: Silvaco Atlas TCAD, AlxGa1−xN/GaN,δ-doped layer,HEMTs, AlN .

References