Indian Journal of Engineering & Materials Sciences

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A band-selective CMOS low-noise amplifier with current reuse gm boosting technique for 3-5 GHz UWB receivers


Affiliations
1 Department of Computer and Radio Communication Engineering, Korea University, 145, Anam-ro, Sungbuk-ku, Seoul 02841, Korea, Republic of
2 Department of Brain and Cognitive Engineering, Korea University, 145, Anam-ro, Sungbuk-ku, Seoul 20841, Korea, Republic of

The authors have proposed a 3-5 GHz ultra-wideband (UWB) low power and low noise amplifier (LNA) with the TSMC 0.18 μm RF CMOS process, which uses a novel dual input matching network for wideband matching. We have used a current-reuse gm-boosted common-gate topology and shunt-shunt feedback common-source output buffer to improve gain and noise figure with low power dissipation. The proposed dual input matching gm-boosted common-gate LNA has been efficient bandwidth to cover UWB band. It has required less inductors or amplification stages to increase bandwidth as compared with the conventional UWB common-gate LNAs. The broadband input stage has been able to be switched to three frequency bands with capacitive switches. The capacitive switch has replaced a large inductor to resonate at lower frequency band. The band-selective LNA has shown linearity improvement by attenuating the undesired interference of a wideband gain circuit and using less inductors. Simulated performance has shown the gains of 15.9, 17.6, and 16.9 dB, and the noise figures of 3.38, 3.28, and 3.27 dB at the 3.432, 3.960, and 4.488 GHz frequency bands, respectively. The proposed UWB LNA has consumed 5 mW from a 1.8-V power supply.
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  • A band-selective CMOS low-noise amplifier with current reuse gm boosting technique for 3-5 GHz UWB receivers

Abstract Views: 205  | 

Authors

Jaemin Shim
Department of Computer and Radio Communication Engineering, Korea University, 145, Anam-ro, Sungbuk-ku, Seoul 02841, Korea, Republic of
Jinwoopark
Department of Brain and Cognitive Engineering, Korea University, 145, Anam-ro, Sungbuk-ku, Seoul 20841, Korea, Republic of
Jichai Jeong
Department of Brain and Cognitive Engineering, Korea University, 145, Anam-ro, Sungbuk-ku, Seoul 20841, Korea, Republic of

Abstract


The authors have proposed a 3-5 GHz ultra-wideband (UWB) low power and low noise amplifier (LNA) with the TSMC 0.18 μm RF CMOS process, which uses a novel dual input matching network for wideband matching. We have used a current-reuse gm-boosted common-gate topology and shunt-shunt feedback common-source output buffer to improve gain and noise figure with low power dissipation. The proposed dual input matching gm-boosted common-gate LNA has been efficient bandwidth to cover UWB band. It has required less inductors or amplification stages to increase bandwidth as compared with the conventional UWB common-gate LNAs. The broadband input stage has been able to be switched to three frequency bands with capacitive switches. The capacitive switch has replaced a large inductor to resonate at lower frequency band. The band-selective LNA has shown linearity improvement by attenuating the undesired interference of a wideband gain circuit and using less inductors. Simulated performance has shown the gains of 15.9, 17.6, and 16.9 dB, and the noise figures of 3.38, 3.28, and 3.27 dB at the 3.432, 3.960, and 4.488 GHz frequency bands, respectively. The proposed UWB LNA has consumed 5 mW from a 1.8-V power supply.