Indian Journal of Engineering & Materials Sciences

Open Access Open Access  Restricted Access Subscription Access

Effect of Gamma Rays Exposure on Cu-Se Heterojunction Nanowires


Affiliations
1 Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
2 Department of Physics, I B College, Panipat 132 103, India
3 Department of Chemistry, C B L U, Bhiwani 127 021, India
 

Metal-semiconductor hetero-junction nanowires are a new class of material created by combining metallic and semiconducting materials. These materials exhibit unique features that could not be seen in the separate components at the nanoscale. With the development of technology, nanowire-based semiconducting elements play a significant part in the generation of new devices that are currently expanding quickly. Pre and post gamma exposed Cu-Se heterojunctioned nanowires were characterised to recognize the impact of gamma exposure. I-V measurements of heterojunction nanowires reveal an increase in current with the gamma dose. XRD of Cu-Se nanowires before and after irradiation showed no change in peak positions, but there were a variation in grain size and the texture coefficient. UV-Vis spectroscopy demonstrates that the optical band gap decreases with dose rate.1

Keywords

Heterojunction, Gamma Irradiation, Structural properties, Optical properties, Electrical properties.
User
Notifications
Font Size

  • Fan X, Zeng G, LaBounty C, Bowers J E, Croke E, Ahn C C & Shakouri A, Appl Phys Let, 78 (11)(2001) 1580.

  • Duan X, Huang Y, Agarwal R, & Lieber C M, Nature, 421 (6920) (2003) 241.

  • Cui Y & Lieber C M, science, 291 (5505)(2001) 851.

  • Law M, Goldberger J & Yang P, Annu Rev Mater Re, 34 (2004) 83.

  • Umana-Membreno G A, Dell J M, Parish G, Nener B D, Faraone L, & Mishra U K, IEEE Trans Electron Devices, 50 (12)(2003) 2326.

  • Güllü Ö, Çankaya M U R A T, Biber M, & Türüt A B D U L M E C İ T, J Phys D Appl Phys, 41 (13)(2008) 135103.

  • Ocak Y S, Kılıçoğlu T, Topal G, & Başkan M H, Nucl Instrum Methods Phys Res A Accel. Spectrom Detect Assoc Equip, 612 (2)(2010) 360.

  • Ali S M, Ramay S M, Rehman N U, ALKhuraiji T S, Shar M A, Mahmood A, & Riaz M, Mater Sci Semicond Process, 93 (2019) 44.

  • Kaya S, Yıldız I, Lok R, & Yılmaz E, Radiat Phys Chem, 150 (2018) 64.

  • Panchal S, & Chauhan R P, J Mater Sci Mater Electron, 31 (2020) 693.

  • Felix J F, da Cunha D L, Aziz M, da Silva Jr E F, Taylor D, Henini M, & de Azevedo W M, Radiat Meas, 71 (2014) 402.

  • Naumov A V, Kaliuzhnyi V V, Vitusevich S A, Hardtdegen H, & Belyaev A E, Semicond phys quantum electron, 24 (4)(2021) 407.

  • Kaya S, Yıldız I, Lok R, & Yılmaz E, Radiat Phys Chem, 150 (2018) 64.

  • Lavanya N, Sekar C, Anithaa A C, Sudhan N, Asokan K, Bonavita A & Neri G, Nanotechnology, 27 (38)(2016) 385502.

  • Ishfaq M, Khan M R, Ali A, Bhardwaj S, Cepek C, & Bhatti A S, Mater Sc Semicond Process, 63 (2017) 107.

  • Narula C, & Chauhan R P, Radiat Phys Chem, 144 (2018) 405.

  • Chintala K M, Panchal S, Rana P, & Chauhan R P, J Mater Sci Mater Electron, 27 (2016), 8087.

  • Rana P, & Chauhan R P, J Mater Sci Mater Electron, 25 (2014) 5630.

  • Rideout V L, Thin Solid Films, 48 (3)(1978) 261. 20 Bardeen J, Physical review, 71 (10)(1947) 717. 21 Aydoğan Ş, Yilmaz M, & Çaldıran Z, Sens Actuator A Phys, 248 (2016) 22.

  • Sana P, Verma S, Malik M M, IEEE Trans Device Mater Reliab, 13 (3)(2013) 407.

  • Jayavel P, Udhayasankar M, Kumar J, Asokan K, Kanjilal D, Nucl Instrum Methods B, 156 (1999) 110.

  • Sharma A T, Kumar S, Katharria Y S, & Kanjilal D, Appl Surf Sci, 254 (2)(2007) 459.


Abstract Views: 91

PDF Views: 52




  • Effect of Gamma Rays Exposure on Cu-Se Heterojunction Nanowires

Abstract Views: 91  |  PDF Views: 52

Authors

Suresh Panchal
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
R. P. Chauhan
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
Chetna Narula
Department of Physics, I B College, Panipat 132 103, India
Saloni Goyal
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
Jaya Khattar
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
Deepak Wadhwa
Department of Chemistry, C B L U, Bhiwani 127 021, India
Vikram Kumar
Department of Physics, I B College, Panipat 132 103, India

Abstract


Metal-semiconductor hetero-junction nanowires are a new class of material created by combining metallic and semiconducting materials. These materials exhibit unique features that could not be seen in the separate components at the nanoscale. With the development of technology, nanowire-based semiconducting elements play a significant part in the generation of new devices that are currently expanding quickly. Pre and post gamma exposed Cu-Se heterojunctioned nanowires were characterised to recognize the impact of gamma exposure. I-V measurements of heterojunction nanowires reveal an increase in current with the gamma dose. XRD of Cu-Se nanowires before and after irradiation showed no change in peak positions, but there were a variation in grain size and the texture coefficient. UV-Vis spectroscopy demonstrates that the optical band gap decreases with dose rate.1

Keywords


Heterojunction, Gamma Irradiation, Structural properties, Optical properties, Electrical properties.

References