Indian Journal of Engineering & Materials Sciences

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Effect of Gamma Rays Exposure on Cu-Se Heterojunction Nanowires


Affiliations
1 Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
2 Department of Physics, I B College, Panipat 132 103, India
3 Department of Chemistry, C B L U, Bhiwani 127 021, India
 

Metal-semiconductor hetero-junction nanowires are a new class of material created by combining metallic and semiconducting materials. These materials exhibit unique features that could not be seen in the separate components at the nanoscale. With the development of technology, nanowire-based semiconducting elements play a significant part in the generation of new devices that are currently expanding quickly. Pre and post gamma exposed Cu-Se heterojunctioned nanowires were characterised to recognize the impact of gamma exposure. I-V measurements of heterojunction nanowires reveal an increase in current with the gamma dose. XRD of Cu-Se nanowires before and after irradiation showed no change in peak positions, but there were a variation in grain size and the texture coefficient. UV-Vis spectroscopy demonstrates that the optical band gap decreases with dose rate.1

Keywords

Heterojunction, Gamma Irradiation, Structural properties, Optical properties, Electrical properties.
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  • Effect of Gamma Rays Exposure on Cu-Se Heterojunction Nanowires

Abstract Views: 54  |  PDF Views: 33

Authors

Suresh Panchal
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
R. P. Chauhan
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
Chetna Narula
Department of Physics, I B College, Panipat 132 103, India
Saloni Goyal
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
Jaya Khattar
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
Deepak Wadhwa
Department of Chemistry, C B L U, Bhiwani 127 021, India
Vikram Kumar
Department of Physics, I B College, Panipat 132 103, India

Abstract


Metal-semiconductor hetero-junction nanowires are a new class of material created by combining metallic and semiconducting materials. These materials exhibit unique features that could not be seen in the separate components at the nanoscale. With the development of technology, nanowire-based semiconducting elements play a significant part in the generation of new devices that are currently expanding quickly. Pre and post gamma exposed Cu-Se heterojunctioned nanowires were characterised to recognize the impact of gamma exposure. I-V measurements of heterojunction nanowires reveal an increase in current with the gamma dose. XRD of Cu-Se nanowires before and after irradiation showed no change in peak positions, but there were a variation in grain size and the texture coefficient. UV-Vis spectroscopy demonstrates that the optical band gap decreases with dose rate.1

Keywords


Heterojunction, Gamma Irradiation, Structural properties, Optical properties, Electrical properties.

References