Indian Journal of Engineering & Materials Sciences

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Investigation of α-Fe2O3 and Cr doped α-Fe2O3 Based Nano-Film as Resistive Switching Material for ReRAM Device Application


Affiliations
1 Material Analysis and Research Laboratory, Department of Physics, Netaji Subhas University of Technology, New Delhi 110 078, India
 

Ferric oxide (α-Fe2O3) based nanoparticles show a vast number of applications along with resistive switching. In the recent study, we synthesized α-Fe2O3 nanoparticles and Cr3+ doped α-Fe2O3 to see the variation in the resistive switching property with chromium doping. XRD and FESEM characterizations have been carried out to confirm the structural and morphological properties of both α-Fe2O3 and CrFeO3 nanoparticles. Optical study has been done by using UV-visible spectroscopy and a decrease in band gap was observed with the chromium doping. I-V characteristics have been studied at room temperature for the synthesized material. The resistive switching effect for synthesized material is confirmed by applying negative and positive bias voltage for which current shows different values. CrFeO3 shows a larger loop of hysteresis as compared to α-Fe2O3 confirming a better material for ReRAM application.

Keywords

Nano-film, Nanoparticle, Resistive switching, Spectroscopy.
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  • Zhang Y, Poddar S, Huang H, Gu L, Zhang Q, Zhou Y, Yan S, Zhang S, Song Z, Huang B, Shen G, and Fan Z, Sci Adv, 7 (2021) 36.

  • Mikolajick S S M, Nat Nanotechnol, 30 (2019) 25.

  • Gao S, Yi X, Shang J, Liu G and Li R W, Chem Soc Rev, 48 (2019) 1531.

  • Fukuchi A T, Nakagawa R, Arita M and Takahashi Y, ACS Appl Mater Interfaces, 10 (2018) 5609.

  • Guan X, Adv Funct Mater, 28 (2018) 1.

  • Dadashi S, Poursalehi R, and Delavar H, Procedia Materials Science, 11 (2015) 722.

  • Kumar DS, Chandra Babu Naidu K, Rafi MM, Prem Nazeer K, Begam AA, Kumar GR, Mater Sci Pol, 36(1), 2018, 123.

  • Nguyen HH, Kieu H, Ta T, Park S, Phan TB, and Pham NK, RSC Adv, (2020) 12900.

  • T P S July, IEEE Trans Plasma Sci, 46 (2019) 4111. 10 Dhariwal N, Chahar M, Kumar V, and Thakur OP, Sens Actuators B Chem, 390 (2023) 1.

  • Yadav P, Dhariwal N, Kumari M, Kumar V, and Thakur OP, Chemosphere , 343 (2023) 140208.

  • Suresh R, Giribabu K, Manigandan R, Mangalaraja RV, Solorza JY, Stephen A, Narayanan V, Solid State Sci, 63 (2017) 39.

  • Hassan G, Bae J, Umair M, and Ali S, Mater Sci Eng B Solid State Mater Adv Technol, 246 (2019) 1.

  • Khan MU, Hassan G, and Bae J, Appl Phys A, 125 (2019) 1.


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  • Investigation of α-Fe2O3 and Cr doped α-Fe2O3 Based Nano-Film as Resistive Switching Material for ReRAM Device Application

Abstract Views: 74  |  PDF Views: 42

Authors

Neeraj Dhariwal
Material Analysis and Research Laboratory, Department of Physics, Netaji Subhas University of Technology, New Delhi 110 078, India
Preeti Yadav
Material Analysis and Research Laboratory, Department of Physics, Netaji Subhas University of Technology, New Delhi 110 078, India
Manju kumari
Material Analysis and Research Laboratory, Department of Physics, Netaji Subhas University of Technology, New Delhi 110 078, India
Vinod Kumar
Material Analysis and Research Laboratory, Department of Physics, Netaji Subhas University of Technology, New Delhi 110 078, India
O. P. Thakur
Material Analysis and Research Laboratory, Department of Physics, Netaji Subhas University of Technology, New Delhi 110 078, India

Abstract


Ferric oxide (α-Fe2O3) based nanoparticles show a vast number of applications along with resistive switching. In the recent study, we synthesized α-Fe2O3 nanoparticles and Cr3+ doped α-Fe2O3 to see the variation in the resistive switching property with chromium doping. XRD and FESEM characterizations have been carried out to confirm the structural and morphological properties of both α-Fe2O3 and CrFeO3 nanoparticles. Optical study has been done by using UV-visible spectroscopy and a decrease in band gap was observed with the chromium doping. I-V characteristics have been studied at room temperature for the synthesized material. The resistive switching effect for synthesized material is confirmed by applying negative and positive bias voltage for which current shows different values. CrFeO3 shows a larger loop of hysteresis as compared to α-Fe2O3 confirming a better material for ReRAM application.

Keywords


Nano-film, Nanoparticle, Resistive switching, Spectroscopy.

References