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Investigating the Efficiency and Optimization of Germanium-based Perovskite Solar Cell Using Scaps ID


Affiliations
1 Department of Applied Physics, Delhi Technological University, Shahbad Daulatpur, New Delhi 110 042, India
 

Germanium-based perovskite solar cells (PSCs) have been a substitute for conventional lead-based perovskite solar cells without sacrificing the environment. In this work, simulation has been carried out with the Cesium germanium bromide, CsGeBr3 perovskite solar Cell on SCAPS-1D and the impact of several factors such as the thickness of the absorber layer, operating temperature and defect density has been analyzed. The device has achieved maximum power conversion efficiency of 11.35 % with an absorber layer thickness of 600 nm at 305 K. The photovoltaic parameters have shown the solar devices to be stable at 305 K. This indicates that CsGeBr3 PSC has become a promising device for future photovoltaic applications and for designing highly efficient lead-free PSC.

Keywords

Absorber, CsGeBr3, Electron transport material (ETL), Hole transport layer (HTL), Heterostructure
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  • Investigating the Efficiency and Optimization of Germanium-based Perovskite Solar Cell Using Scaps ID

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Authors

Anushansha Yadav
Department of Applied Physics, Delhi Technological University, Shahbad Daulatpur, New Delhi 110 042, India
Vanshika
Department of Applied Physics, Delhi Technological University, Shahbad Daulatpur, New Delhi 110 042, India
Rahul Kundara
Department of Applied Physics, Delhi Technological University, Shahbad Daulatpur, New Delhi 110 042, India
Sarita Baghel
Department of Applied Physics, Delhi Technological University, Shahbad Daulatpur, New Delhi 110 042, India

Abstract


Germanium-based perovskite solar cells (PSCs) have been a substitute for conventional lead-based perovskite solar cells without sacrificing the environment. In this work, simulation has been carried out with the Cesium germanium bromide, CsGeBr3 perovskite solar Cell on SCAPS-1D and the impact of several factors such as the thickness of the absorber layer, operating temperature and defect density has been analyzed. The device has achieved maximum power conversion efficiency of 11.35 % with an absorber layer thickness of 600 nm at 305 K. The photovoltaic parameters have shown the solar devices to be stable at 305 K. This indicates that CsGeBr3 PSC has become a promising device for future photovoltaic applications and for designing highly efficient lead-free PSC.

Keywords


Absorber, CsGeBr3, Electron transport material (ETL), Hole transport layer (HTL), Heterostructure

References