Informatics Publishing Limited

K. J. Patel ¹, G. G. Bhatt ¹, P. B. Patel ², D. Lakshminarayana ², C. J. Panchal ³, M. S. Desai ³, Priya Suryavanshi ³

Affiliations
1 Science and Humanities Department, BITS Education Campus, Vadodara, IN
2 Department of Electronics, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, IN
3 Applied Physics Department, The M. S. University of Baroda, Vadodara-390001, IN

Abstract

Solid-state reflection modulation electrochromic device (ECD) will have a significant place in future automobile rear-view mirrors and thermal control. In the present study we have prepared "solidstate ECD" structure consisting of layers Al / WO₃ / ZrO₂/ NiO / 'ITO' on a glass substrate using physical vapor deposition method. The fundamental electrochromic characteristic viz. reflectance modulation and switching time are measured on the fabricated prototype ECD. The device shows 65% reflections modulation (75%-10%) in the visible region of light with the coloration and bleaching time of 100 s and 300 s, respectively.

Keywords

Electrochromic Device, Physical Vapor Deposition, Reflectance Modulation, Switching Time.

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T. O. Berestok ¹, A. S. Opanasyuk ¹, D. I. Kurbatov ¹, H. Cheong ², U. B. Trivedi ³, D. Lakshminarayana ³, C. J. Panchal ⁴, Priya Suryavanshi ⁴

Affiliations
1 Department of Electronics and Computer Technology, Sumy State University, Sumy, UA
2 Department of Physics, Sogang University, Seoul, KR
3 Department of Electronics, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, IN
4 Applied Physics Department, The M.S. University of Baroda, Vadodara-390001, IN

Abstract

Undoped and Al doped ZnO films are obtained by chemical bath deposition onto glass substrates. Investigations of the effect of reaction time on structural and sub-structural features were carried out using high resolution scanning electron microscopy (SEM) and X-ray diffraction analysis. The effects of deposition time on elemental composition are found. Deposited ZnO and ZnO:Al films have a hexagonal structure with growth texture of [002]. Lattice constants of undoped material weakly depend on the time of synthesis and vary in the range of a=0.32486-0.32548 nm, c=0.52064-0.52149 nm. Simultaneously, lattice constants of Al doped ZnO films vary in the wide range: a=0.32490-0.31997 nm, c=0.52293-0.52116 nm. The coherent scattering domain size (CSD) of undoped ZnO are in the range of (L₍₁₀₀₎=(24.5-27.3) nm, L₍₀₀₂₎=(26.4-28.8) nm, L₍₁₀₁₎=(25.0-27.1) nm). In the ZnO:Al films the CSD size increased with increasing the duration of their synthesis from 45 to 90 min (L₍₁₀₀₎=(19.5-52.3) nm, L₍₀₀₂₎=23.2-55.0) nm, L₍₁₀₁₎=(17.6-48.3) nm). Further increase of reaction time up to 120 min led to a significant reduction of the CSD size in all crystallographic directions (L₍₁₀₀₎=38.0 nm, L₍₀₀₂₎=39.0 nm, L₍₁₀₁₎=39.4 nm) which was due to the peculiarities of ZnO:Al growth.

Keywords

ZnO, ZnO:Al, Chemical Bath Deposition, Structure, Sub-Structure.

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