Indian Journal of Pure and Applied Physics

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Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs


Affiliations
1 Department of Electronics and Communication Engineering, Rajeev Gandhi Memorial College of Engineering and Technology, Nandyal, District–Kurnool, Andhra Pradesh — 518 501, India
2 Department of Electronics and Communication Engineering, National Institute of Technology ArunachalPradesh, Yupia, District-Papum Pare, Arunachal Pradesh — 791 112, India

In this work, a structural optimisation is performed on the basis of DC and RF performances of high electron mobility transistors (HEMTs) in nano-scale regime by simulation results obtained from SILVACO-ATLAS physical simulator. The formation of quantum well is demonstrated at unbiased condition in each type of these HEMT structures. In DC analysis of each structure, the variations in drain current are studied with respect to drain voltage, gate voltage and doping concentration. Also, the variations in transconductance are studied with gate voltage and doping concentration corresponding to each structure. In RF analysis, the variations in current gain cut-off frequency and power gain cut-off frequency are studied with gate voltage and doping concentration corresponding to each structure. The DC and RF performances are observed to be the highest for modified HEMT structure with inserted InN atomic layer (0.36 nm thick) having AlGaN doping concentration of 4×1018 cm-3 among all designed structures in this work. To investigate the effect of doping concentration on DC and RF performances in nano-scale regime is one novelty in this work. Our work may be helpful in the applications related to biomedical sensors. Also, our work may be suitable for high frequency applications.
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Abstract Views: 145




  • Investigation to Enhance the DC and RF Performances of Nitride-Based Nanoelectronic HEMTs

Abstract Views: 145  | 

Authors

Sanjib Kalita
Department of Electronics and Communication Engineering, Rajeev Gandhi Memorial College of Engineering and Technology, Nandyal, District–Kurnool, Andhra Pradesh — 518 501, India
Avrajyoti Dutta
Department of Electronics and Communication Engineering, National Institute of Technology ArunachalPradesh, Yupia, District-Papum Pare, Arunachal Pradesh — 791 112, India
Subhadeep Mukhopadhyay
Department of Electronics and Communication Engineering, National Institute of Technology ArunachalPradesh, Yupia, District-Papum Pare, Arunachal Pradesh — 791 112, India

Abstract


In this work, a structural optimisation is performed on the basis of DC and RF performances of high electron mobility transistors (HEMTs) in nano-scale regime by simulation results obtained from SILVACO-ATLAS physical simulator. The formation of quantum well is demonstrated at unbiased condition in each type of these HEMT structures. In DC analysis of each structure, the variations in drain current are studied with respect to drain voltage, gate voltage and doping concentration. Also, the variations in transconductance are studied with gate voltage and doping concentration corresponding to each structure. In RF analysis, the variations in current gain cut-off frequency and power gain cut-off frequency are studied with gate voltage and doping concentration corresponding to each structure. The DC and RF performances are observed to be the highest for modified HEMT structure with inserted InN atomic layer (0.36 nm thick) having AlGaN doping concentration of 4×1018 cm-3 among all designed structures in this work. To investigate the effect of doping concentration on DC and RF performances in nano-scale regime is one novelty in this work. Our work may be helpful in the applications related to biomedical sensors. Also, our work may be suitable for high frequency applications.