Indian Journal of Pure and Applied Physics

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Influence of Thermal Annealing to Material Properties of TiO2, ZnO, and TiO2/ZnO Bilayer Films by Sol-Gel Method


Affiliations
1 Department of Physics, Hasanuddin University, Sulawesi Selatan 90245
2 Department of Chemistry, Hasanuddin University, Sulawesi Selatan 90245
3 Research Center of Physics, Indonesian Instituteof Sciences (LIPI), Tengerang-Banten

This study reported on the material properties of TiO2, ZnO, and TiO2/ZnO bilayer thin films fabricated by sol-gel spin coating technique after annealing. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of ethanol and diethanolamine (DEA) was later added. Meanwhile, for TiO2 films, titanium tetraisopropoxide (TTIP) was dissolved into ethanol and an acetate acid was added. Afterwards all film samples were annealed at different temperatures in the range of 400 – 600oC for 60 minutes. For TiO2/ZnO bilayer thin films, the structural properties showed that after annealing at 600oC, the X-RD peak intensity was more pronounced compared to at 400 and 500 oC. This indicated that the amorphous phase of the films decreased after annealing at 600 oC. Furthermore, the crystallite sizes of the films increase as the annealing temperature increased to 600 oC, while the strain reduces at this temperature. In the case of (UV-Vis) spectroscopy, it was seen that after annealing the transmittance value of the TiO2/ZnO bilayer increase. The band gap energy of the films consists of low and high energy. The low energy which is around 3.30 eV refers to the transitions of valenceconduction band in ZnO films and high energy was around 3.60 eV corresponding to the impurity transitions. In addition, the refractive index (n), the extinction coefficient (k), and the real and imaginary part of dielectric constant were determined from the transmittance and absorbance spectra results. Based on the SEM results indicate that there was no cluster in the surface of TiO2/ZnO bilayer thin films.
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  • Influence of Thermal Annealing to Material Properties of TiO2, ZnO, and TiO2/ZnO Bilayer Films by Sol-Gel Method

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Authors

Paulus Lobo Gareso
Department of Physics, Hasanuddin University, Sulawesi Selatan 90245
Eko Juarlin
Department of Physics, Hasanuddin University, Sulawesi Selatan 90245
Heryanto Heryanto
Department of Physics, Hasanuddin University, Sulawesi Selatan 90245
Paulina Taba
Department of Chemistry, Hasanuddin University, Sulawesi Selatan 90245
Didik Aryanto
Research Center of Physics, Indonesian Instituteof Sciences (LIPI), Tengerang-Banten

Abstract


This study reported on the material properties of TiO2, ZnO, and TiO2/ZnO bilayer thin films fabricated by sol-gel spin coating technique after annealing. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of ethanol and diethanolamine (DEA) was later added. Meanwhile, for TiO2 films, titanium tetraisopropoxide (TTIP) was dissolved into ethanol and an acetate acid was added. Afterwards all film samples were annealed at different temperatures in the range of 400 – 600oC for 60 minutes. For TiO2/ZnO bilayer thin films, the structural properties showed that after annealing at 600oC, the X-RD peak intensity was more pronounced compared to at 400 and 500 oC. This indicated that the amorphous phase of the films decreased after annealing at 600 oC. Furthermore, the crystallite sizes of the films increase as the annealing temperature increased to 600 oC, while the strain reduces at this temperature. In the case of (UV-Vis) spectroscopy, it was seen that after annealing the transmittance value of the TiO2/ZnO bilayer increase. The band gap energy of the films consists of low and high energy. The low energy which is around 3.30 eV refers to the transitions of valenceconduction band in ZnO films and high energy was around 3.60 eV corresponding to the impurity transitions. In addition, the refractive index (n), the extinction coefficient (k), and the real and imaginary part of dielectric constant were determined from the transmittance and absorbance spectra results. Based on the SEM results indicate that there was no cluster in the surface of TiO2/ZnO bilayer thin films.