Indian Journal of Pure and Applied Physics

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Preparation and Investigation of Transparent Conducting Aluminium-doped Zinc Oxide Films Prepared by Sol-gel Method for Sensor Application


Affiliations
1 Plasma Waves and Electric Propulsion Laboratory, Department of Physics, Central University of Rajasthan, Ajmer, Kishangarh- 305 817, India
2 Department of Physics, GuruNanak Dev University, Amritsar, Punjab-143 005, India
3 Department of Physics & Electronics, Hansraj College, University of Delhi, Delhi-110 007, India

Aluminium doped Zinc Oxide (AZO) thin films were prepared through chemical route using sol gel method at different annealing temperatures with three different concentrations of Al. It has been observed that on increasing in the annealing temperature, the crystallinity of the films improved. The XRD patters confirms the polycrystalline nature of the samples and found that increasing annealing temperature, increases the crystallinity of the films. The UV-vis spectroscopy analysis shows that, the band-gap decreases in all three concentration of Al ions in ZnO with temperature. The conductivity and the grain size increases with temperature. The band gap corresponding to the absorption decreases with increased annealing temperature.
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  • Preparation and Investigation of Transparent Conducting Aluminium-doped Zinc Oxide Films Prepared by Sol-gel Method for Sensor Application

Abstract Views: 92  | 

Authors

Sukhmander Singh
Plasma Waves and Electric Propulsion Laboratory, Department of Physics, Central University of Rajasthan, Ajmer, Kishangarh- 305 817, India
Prabhjot singh
Department of Physics, GuruNanak Dev University, Amritsar, Punjab-143 005, India
jasmeet kaur
Department of Physics, GuruNanak Dev University, Amritsar, Punjab-143 005, India
Bhavna Vidhani
Department of Physics & Electronics, Hansraj College, University of Delhi, Delhi-110 007, India
Sonia Yogi
Department of Physics & Electronics, Hansraj College, University of Delhi, Delhi-110 007, India

Abstract


Aluminium doped Zinc Oxide (AZO) thin films were prepared through chemical route using sol gel method at different annealing temperatures with three different concentrations of Al. It has been observed that on increasing in the annealing temperature, the crystallinity of the films improved. The XRD patters confirms the polycrystalline nature of the samples and found that increasing annealing temperature, increases the crystallinity of the films. The UV-vis spectroscopy analysis shows that, the band-gap decreases in all three concentration of Al ions in ZnO with temperature. The conductivity and the grain size increases with temperature. The band gap corresponding to the absorption decreases with increased annealing temperature.