Indian Journal of Pure and Applied Physics

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The Effectiveness of Ga Percent on the Electrical Characteristics of Al/CuIn1-xGaxSe2/ITO Schottky Junctions


Affiliations
1 Laboratoire de nanomatériaux et des systèmes pour les énergies renouvelables (LaNSER), Centre de Recherches et des Technologies de l'Energie (CRTEn), BP. 95, Hammam Lif 2050
2 Materials Physics and Energy Laboratory, Department of Physics, College of Science and Arts at Ar Rass,Qassim University, ArRass 51921

The electrodeposition method has been employed to deposit our quaternary semiconductor thin films CuIn1-xGaxSe2 (CIGS) which is deposited on Indium Tin Oxide (ITO) substrates with different Gallium ratios (x=0, 0.2, 0.4, 0.6, 0.8 and 1). The structural and optical characteristics variation of the films with altering Ga percent has been studied. The impact of changing the Ga/(In+Ga) atomic ratio on the electrical transport characteristics of electrodeposited CIGS thin films has been investigated using I-V and C-V measurements. All junctions have revealed the Schottky behavior. The energy gap of the studied compositions has increased with increasing Ga content. This lowered the values of charge mobility in the investigated films. Besides, the optimum Ga/(In+Ga) atomic proportion in the view of the obtained results is achieved by adding Ga with 20 %. Also, this finding approves the validation of our proposed criterion in expecting the most efficient photovoltaic junctions. The obtained results could improve our current knowledge of the quaternary photovoltaic solar cells.
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  • The Effectiveness of Ga Percent on the Electrical Characteristics of Al/CuIn1-xGaxSe2/ITO Schottky Junctions

Abstract Views: 142  | 

Authors

Sahbi Hamrouni
Laboratoire de nanomatériaux et des systèmes pour les énergies renouvelables (LaNSER), Centre de Recherches et des Technologies de l'Energie (CRTEn), BP. 95, Hammam Lif 2050
Manea AlKhalifah
Materials Physics and Energy Laboratory, Department of Physics, College of Science and Arts at Ar Rass,Qassim University, ArRass 51921
Khaled Ben Saad
Laboratoire de nanomatériaux et des systèmes pour les énergies renouvelables (LaNSER), Centre de Recherches et des Technologies de l'Energie (CRTEn), BP. 95, Hammam Lif 2050
Mohammed Sobhy Elsayed El-Bana
Materials Physics and Energy Laboratory, Department of Physics, College of Science and Arts at Ar Rass,Qassim University, ArRass 51921

Abstract


The electrodeposition method has been employed to deposit our quaternary semiconductor thin films CuIn1-xGaxSe2 (CIGS) which is deposited on Indium Tin Oxide (ITO) substrates with different Gallium ratios (x=0, 0.2, 0.4, 0.6, 0.8 and 1). The structural and optical characteristics variation of the films with altering Ga percent has been studied. The impact of changing the Ga/(In+Ga) atomic ratio on the electrical transport characteristics of electrodeposited CIGS thin films has been investigated using I-V and C-V measurements. All junctions have revealed the Schottky behavior. The energy gap of the studied compositions has increased with increasing Ga content. This lowered the values of charge mobility in the investigated films. Besides, the optimum Ga/(In+Ga) atomic proportion in the view of the obtained results is achieved by adding Ga with 20 %. Also, this finding approves the validation of our proposed criterion in expecting the most efficient photovoltaic junctions. The obtained results could improve our current knowledge of the quaternary photovoltaic solar cells.