Indian Journal of Pure and Applied Physics

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Structural, Dielectric and Electrical Properties of Homovalent Doped SrSn1-xTixO3 (0 ≤ x ≤ 0.08) System


Affiliations
1 Department of Physics, School of Science, IFTM University, Moradabad-244 102, U.P., India
2 Centre of Material Sciences, University of Allahabad, Prayagraj 211 002, India
3 Department of Physical Sciences, Banasthali Vidyapith, Banasthali-304 022, Rajasthan, India
4 Advanced Functional Materials Laboratory, Department of Applied Sciences, IIIT Allahabad, Prayagraj, 211 015, India
 

The samples SrSn1-xTixO3 with composition 0 ≤ 𝑥 ≤ 0.08 have been prepared using sol-gel chemical route by sintering at 1173 K. All the samples are found to be single phase crystallized in orthorhombic structure. The dielectric properties indicate the existence of interfacial and orientation polarization in samples found to be stable up to 300 °C. Thermal dependence of electrical conductivity represents two conduction regions with activation energy (0.77-0.94) eV in region-1 and (0.19-0.27) eV in region-2 respectively. The plot of dc conductivity with hopping frequency results unit slope representing that the charge carriers remain same in both processes. DC conductivity of samples are found to be increased with Ti4+, due to reduction in polaron size. The present materials can be potentially used in thermally stable capacitor and mixed ionic and electronic conductors (MIECs) applications.

Keywords

SrSn1-xTixO3, Sol-Gel Preparation, Electrical Properties, Defects.
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  • Structural, Dielectric and Electrical Properties of Homovalent Doped SrSn1-xTixO3 (0 ≤ x ≤ 0.08) System

Abstract Views: 83  |  PDF Views: 60

Authors

Aditya Kumar
Department of Physics, School of Science, IFTM University, Moradabad-244 102, U.P., India
Manoj K. Singh
Centre of Material Sciences, University of Allahabad, Prayagraj 211 002, India
Minakshi Sharma
Department of Physical Sciences, Banasthali Vidyapith, Banasthali-304 022, Rajasthan, India
Upendra Kumar
Advanced Functional Materials Laboratory, Department of Applied Sciences, IIIT Allahabad, Prayagraj, 211 015, India

Abstract


The samples SrSn1-xTixO3 with composition 0 ≤ 𝑥 ≤ 0.08 have been prepared using sol-gel chemical route by sintering at 1173 K. All the samples are found to be single phase crystallized in orthorhombic structure. The dielectric properties indicate the existence of interfacial and orientation polarization in samples found to be stable up to 300 °C. Thermal dependence of electrical conductivity represents two conduction regions with activation energy (0.77-0.94) eV in region-1 and (0.19-0.27) eV in region-2 respectively. The plot of dc conductivity with hopping frequency results unit slope representing that the charge carriers remain same in both processes. DC conductivity of samples are found to be increased with Ti4+, due to reduction in polaron size. The present materials can be potentially used in thermally stable capacitor and mixed ionic and electronic conductors (MIECs) applications.

Keywords


SrSn1-xTixO3, Sol-Gel Preparation, Electrical Properties, Defects.

References