Indian Journal of Pure and Applied Physics

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On-Orbit Performance of Pd/4H-SiC Schottky UV Detectors in a Low-Earth Orbit


Affiliations
1 Laboratory for Electro-Optics Systems, Indian Space Research Organization, Bengaluru, Karnataka 560 058, India
2 U R Rao Satellite Centre, Indian Space Research Organization, Bengaluru, Karnataka 560 017, India
 

The monitoring of solar ultraviolet radiation from a space platform is now considered essential for a wide range of fields including solar physics, atmospheric science and astrobiology. 4H-Silicon Carbide (4H-SiC) is a superior alternative to conventional materials like silicon for the fabrication of UV detectors for adverse space conditions due to its inherent radiation hardness and visible-blind nature. This paper describes the space qualification and deployment of indigenously developed Pd/4H-SiC Schottky UV detectors in a low-earth orbit (LEO) and their on-board performance. Two SiC UV detectors were flown as a rad-hard sun detection sensor in the nanosatellite INS-2TD. The sensor has carried out solar UV flux observations continuously since its launch in February 2022 and the data gathered during the first seven months of flight is discussed in this paper.

Keywords

4H-SiC UV Detectors, LEO, Space Qualification, Solar UV Measurements.
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  • On-Orbit Performance of Pd/4H-SiC Schottky UV Detectors in a Low-Earth Orbit

Abstract Views: 125  |  PDF Views: 83

Authors

Bhavana D
Laboratory for Electro-Optics Systems, Indian Space Research Organization, Bengaluru, Karnataka 560 058, India
Sirisha J
Laboratory for Electro-Optics Systems, Indian Space Research Organization, Bengaluru, Karnataka 560 058, India
Sumesh M A
Laboratory for Electro-Optics Systems, Indian Space Research Organization, Bengaluru, Karnataka 560 058, India
Ravi Chandra Babu G
U R Rao Satellite Centre, Indian Space Research Organization, Bengaluru, Karnataka 560 017, India
Amit Maji
Laboratory for Electro-Optics Systems, Indian Space Research Organization, Bengaluru, Karnataka 560 058, India
S P Karanth
Laboratory for Electro-Optics Systems, Indian Space Research Organization, Bengaluru, Karnataka 560 058, India
Sriram K V
Laboratory for Electro-Optics Systems, Indian Space Research Organization, Bengaluru, Karnataka 560 058, India

Abstract


The monitoring of solar ultraviolet radiation from a space platform is now considered essential for a wide range of fields including solar physics, atmospheric science and astrobiology. 4H-Silicon Carbide (4H-SiC) is a superior alternative to conventional materials like silicon for the fabrication of UV detectors for adverse space conditions due to its inherent radiation hardness and visible-blind nature. This paper describes the space qualification and deployment of indigenously developed Pd/4H-SiC Schottky UV detectors in a low-earth orbit (LEO) and their on-board performance. Two SiC UV detectors were flown as a rad-hard sun detection sensor in the nanosatellite INS-2TD. The sensor has carried out solar UV flux observations continuously since its launch in February 2022 and the data gathered during the first seven months of flight is discussed in this paper.

Keywords


4H-SiC UV Detectors, LEO, Space Qualification, Solar UV Measurements.

References