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Design of an Ion Trap for Trapping Single 171Yb+


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1 CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110 012, India
 

We present an ion trap design of end-cap geometry and numerically calculate its potential. An rf-resonator of quality factor 800(20) has been fabricated for delivering high voltage to the trap. An optical frequency standard will be developed by trapping and laser cooling a single 171Yb+. Optical arrangements for photoionization, laser cooling and detection are also described.
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  • Design of an Ion Trap for Trapping Single 171Yb+

Abstract Views: 418  |  PDF Views: 153

Authors

S. De
CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110 012, India
N. Batra
CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110 012, India
S. Chakraborty
CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110 012, India
S. Panja
CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110 012, India
A. Sen Gupta
CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110 012, India

Abstract


We present an ion trap design of end-cap geometry and numerically calculate its potential. An rf-resonator of quality factor 800(20) has been fabricated for delivering high voltage to the trap. An optical frequency standard will be developed by trapping and laser cooling a single 171Yb+. Optical arrangements for photoionization, laser cooling and detection are also described.


DOI: https://doi.org/10.18520/cs%2Fv106%2Fi10%2F1348-1352