Simulation of Nanoscale INSB Based HEMT Device for Low Power and High Frequency Applications

Indium antimonide nanoparticles were synthesized at room temperature. X-ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticles has an average particle size in a range of 47mmto 99mm which is observed using the XRD result. He InSb is a material which is used to design the transistor. For designing purpose the simulator TCAD is used, by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normal devices. Designed device is more valuable since a nanocomposite InSb material is used as a channel in HEMT device, thereby leading to the nanosized HEMT device. In addition, InSb has the property of high saturation velocity and mobility which results in higher performance of the device than any other materials in III-V compounds.