Digital Signal Processing

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Sensitivity of ft to Process Parameter Variation in 30 nm Gate Length Fin FETs


Affiliations
1 Department of Information Technology in SSN College of Engineering, Kalavakkam – 603 110, Chennai, Tamilnadu, India
2 Department of Information Technology in SSN College of Engineering, Kalavakkam – 603 110, Chennai, Tamilnadu, India
     

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This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness and SD doping and less sensitive to source/drain width and length, and work function variations.

Keywords

ft, FinFET, Scaling, Process Variations.
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  • Sensitivity of ft to Process Parameter Variation in 30 nm Gate Length Fin FETs

Abstract Views: 184  |  PDF Views: 2

Authors

K. R. Vishnupriya
Department of Information Technology in SSN College of Engineering, Kalavakkam – 603 110, Chennai, Tamilnadu, India
B. Lakshmi
Department of Information Technology in SSN College of Engineering, Kalavakkam – 603 110, Chennai, Tamilnadu, India
R. Srinivasan
Department of Information Technology in SSN College of Engineering, Kalavakkam – 603 110, Chennai, Tamilnadu, India

Abstract


This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness and SD doping and less sensitive to source/drain width and length, and work function variations.

Keywords


ft, FinFET, Scaling, Process Variations.