Digital Signal Processing

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Inverted InAlAs/InGaAs MOSHEMT with Nanoscale Gate Length for Terahertz Applications


Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, India
2 Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, India
     

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A 650nm gate-length device exhibited a high drive current at low Vds, with an ultra-low on-resistance. A high peak effective mobility is also going to extracted, indicating excellent electron transport properties. Selectively regrown n++ In0.53Ga0.47 As source/drain by MOCVD was incorporated in inverted-type InAlAs/InGaAs MOSHEMTs on GaAs substrates. The thermal stability of the inverted epitaxial HEMT structure after source/drain regrowth was investigated using Van der Pauw Hall measurements.

Keywords

Inversion Channel InAlAs/InGaAs MOSHEMT, Selective Growth, On-Current, Effective Mobility, Low On-Resistance, High Current.
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  • Inverted InAlAs/InGaAs MOSHEMT with Nanoscale Gate Length for Terahertz Applications

Abstract Views: 226  |  PDF Views: 2

Authors

S. Kirubashree
Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, India
S. Baskaran
Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, India

Abstract


A 650nm gate-length device exhibited a high drive current at low Vds, with an ultra-low on-resistance. A high peak effective mobility is also going to extracted, indicating excellent electron transport properties. Selectively regrown n++ In0.53Ga0.47 As source/drain by MOCVD was incorporated in inverted-type InAlAs/InGaAs MOSHEMTs on GaAs substrates. The thermal stability of the inverted epitaxial HEMT structure after source/drain regrowth was investigated using Van der Pauw Hall measurements.

Keywords


Inversion Channel InAlAs/InGaAs MOSHEMT, Selective Growth, On-Current, Effective Mobility, Low On-Resistance, High Current.