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Analysis & Simulation of InSb HEMT Device for Low Power and Switching Applications


Affiliations
1 Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, India
2 Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, India
     

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The strained band structures of InSb are calculated, and then the DC and RF performances of the InSb HEMTs are analyzed by using the TCAD simulation. These are also compared with the InAs HEMTs. Although the compressive strain applied to the channel increases the electron effective mass m*, the InSb HEMTs still show the higher current drivability and the higher fT than the InAs HEMTs from the lower Vds. However, the severe impact ionization occurs from the lower Vds owing to the smaller impact ionization threshold energy, Eth, although the compressive strain increases it. This restricts the InSb HEMTs within the low Vds applications.


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  • Analysis & Simulation of InSb HEMT Device for Low Power and Switching Applications

Abstract Views: 283  |  PDF Views: 2

Authors

V. Arun Kumar
Department of Information and Communication Engineering, S.K.P Engineering College, Thiruvannamalai-606611, India
P. Anandan
Information and Communication Engineering, SKP Engineering College, Tiruvannamalai, Tamil Nadu, India

Abstract


The strained band structures of InSb are calculated, and then the DC and RF performances of the InSb HEMTs are analyzed by using the TCAD simulation. These are also compared with the InAs HEMTs. Although the compressive strain applied to the channel increases the electron effective mass m*, the InSb HEMTs still show the higher current drivability and the higher fT than the InAs HEMTs from the lower Vds. However, the severe impact ionization occurs from the lower Vds owing to the smaller impact ionization threshold energy, Eth, although the compressive strain increases it. This restricts the InSb HEMTs within the low Vds applications.