A Novel and Single Chip Tri-Band Lownoise Amplifier for WLAN, WIFI and WIMAX Receivers

In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation forces designers to make choices in the design of RF circuits. In this paper the aim is to design and simulate a novel and single Chip consists of a tri-band low noise amplifier (LNA) operating simultaneously at three frequency bands 1.9 GHz, 2.4 GHz and 5 GHz for WLAN, WiFi and WiMax receivers, is designed and presented in this paper. It can be used in many applications of wireless communication (GSM, Zigbee, Bluetooth, Wi-Fi, HiperLAN, UWB, etc ...) for 3G and 4G networks. The proposed circuit is based on two amplifiers, dual-band and simple band, with transistor GaAs FET type ATF 10136 that has a better performance, successful integration of feasibility and a low price compared with other technologies. Simulations of the operation of the amplifier were performed with the software Agilent Advanced Design System (ADS) and Ansoft software and performance of the amplifier were recorded and analyzed. A single stage LNA has successfully been designed with 29.3dB, 24.56dB and 11.93dB with noise figure of 0.44dB, 0.49dB and 4.42dB respectively at three frequency bands 1.9 GHz, 2.5 GHz and 5 GHz.