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A Review on ZnO Heterojunction Photodetector for UV Application
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Hetero-structured photodetector is a rapidly growing field of optoelectronic sensing for designing ultraviolet photodetectors of high efficiency and high responsivity. In recent years, one of the next generation semiconductor material ZnO, has attracted much attention in shorter wavelength optoelectronics devices and sensors. ZnO is considered as an ideal candidate in UV region because of its large exciton binding energy (60 meV), and wide bandgap energy (3.37eV). Naturally ZnO has n type conductivity and is very difficult to produce p type ZnO. Various p type materials such as Si, GaN, NiO, and Sr2Cu2O2 have been used to realize p-n hetero junction photodetector. ZnO/Si based heterojunction devices have good electrical and optical properties, are easy to fabricate and has low deposition temperature. GaN is one of the propitious material in terms of considerably small lattice mismatch, less than 1.8% with ZnO and also exhibits similar lattice structure (wurtzite). ZnO/GaN structure exhibits high UV to visible rejection ratio and is very useful for high sensitive UV applications. The responsivity of n type ZnO with Si and GaN as substrate material is analyzed in this work. Also analyzed the various parameters that affects the responsivity of photo detector.
Keywords
Photodetector, Heterojunction, Responsivity, ZnO, GaN.
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- Govinda Lakhotia, “An Investigation on TiO2-ZnO based Thick Film ‘Solar Blind’, Photo-Conductor for ‘Green’ Electronics”, Materials Science and Engineering: B, Vol. 168, No. 1-3, pp. 66-70, 2010.
- U. Koch, A. Fojtik, H. Weller and A. Henglein, “Photochemistry of Semiconductor Colloids, Preparation of Extremely small ZnO Particles, Fluorescence Phenomena and Size Quantization Effects”, Chemical Physics Letters, Vol. 122, No. 5, pp. 507-510, 1985.
- G.K. Paul, A. Bhaumik, A. Patra and S. Bera, “Enhanced Photo-Electric Response of ZnO/Polyaniline Layer-by-Layer Self-Assembled Films”, Materials Chemistry and Physics, Vol. 106, No. 2-3, pp. 360-363, 2007.
- Henrik Fabricius, Torben Skettrup and Paul Bisgaard, “Ultraviolet Detectors in Thin Sputtered ZnO Films”, Applied Optics, Vol. 25, No. 16, pp. 2764-2767, 1986.
- Anderson Janotti and Chris G. Van de Walle, “Fundamentals of Zinc Oxide as a Semiconductor”, Reports on Progress in Physics, Vol. 72, No. 12, pp. 1-12, 2009.
- Tae-Hyoung Moon, Min-Chang Jeong, Woong Lee and Jae-Min Myoung, “The Fabrication and Characterization of ZnO UV Detector”, Applied Surface Science, Vol. 240, No. 1-4, pp. 280-285, 2005.
- Ozgur Umit, Daniel Hofstetter and Hadis Morkoc, “ZnO Devices and Applications: A Review of Current Status and Future Prospects”, Proceedings of the IEEE, Vol. 98, No. 7, pp. 1255-1268, 2010.
- R.Romero, M.C. Lopez, D. Leinen, F. Martin and J.R. Ramos-Barrado, “Electrical Properties of n-ZnO/c-Si Heterojunction Prepared by Chemical Spray Pyrolysis”, Material Science and Engineering:B, Vol. 110, No. 1, pp. 87-93, 2004.
- Shashikant Sharma and C. Periasamy, “Simulation Study and Performance Analysis of n-ZnO/p-Si Heterojunction Photodetector”, Journal of Electron Devices, Vol. 19, pp. 1633-1636, 2014.
- Y.F Gu, X.M. Li, J.L.Zhao, W.D. Yu, X.D. Gao and C. Yang, “Visible-Blind Ultra-Violet Detector Based on n-ZnO/P-Si Heterojunction Fabricated by Plasma-assisted Pulsed Laser Deposition”, Solid State Communication, Vol. 143, No. 8-9, pp. 421-424, 2007.
- Lichun Zhang, Fengzhou Zhao, Caifeng Wang, Feifei Wang, Ruizhi Huang and Qingshan Li, “Optoelectronic Characteristics of UV Photodetector based on GaN/ZnO Nanorods Pin Heterostructures”, Electronic Materials Letters, Vol. 11, No. 4, pp. 682-686, 2015.
- Meng Ding, Dongxu Zhao, Bin Yao, Zhipeng Lid and Xijin Xu, “Ultraviolet Photodetector based on Heterojunction of n-ZnO Microwire/p-GaN Film”, RSC Advances, Vol. 5, No. 2, pp. 908-912, 2015.
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