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A High Gain and Low Noise CMOS Gilbert Mixer with Improved Linearity Based on MGTR and Switched Biasing Technique


Affiliations
1 Department of Electronics and Telecommunication Engineering, Veer Surendra Sai University of Technology, Iceland
2 Department of Electronics and Telecommunication Engineering, Veer Surendra Sai University of Technology, India
     

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This brief presents the design of an improved linear Gilbert mixer with high conversion gain and low noise figure by using multiple gated transistor (MGTR) and switched biasing technique. This mixer operates at a radio frequency (RF) of 2.4GHz with a local oscillator (LO) power of 5dBm in UMC 180nm process. The MGTR method is used to increase the linearity of the proposed mixer by the parallel combination of transconductance stage transistors and auxiliary transistors. The switched biasing technique is adopted for a current source instead of static biasing which lowers the noise figure. The integration of two techniques result in a conversion gain (CG) of 10.9dB and a noise figure (NF) of 7.2dB with the third order input intercept point (IIP3) of 10.79dBm. This proposed mixer circuit consumes 4.2mW power from a supply voltage of 1.8V.

Keywords

Conversion Gain, Gilbert Mixer, MGTR, Noise Figure, Static Biasing.
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  • Govinda Lakhotia, “An Investigation on TiO2-ZnO based Thick Film ‘Solar Blind’, Photo-Conductor for ‘Green’ Electronics”, Materials Science and Engineering: B, Vol. 168, No. 1-3, pp. 66-70, 2010.
  • U. Koch, A. Fojtik, H. Weller and A. Henglein, “Photochemistry of Semiconductor Colloids, Preparation of Extremely small ZnO Particles, Fluorescence Phenomena and Size Quantization Effects”, Chemical Physics Letters, Vol. 122, No. 5, pp. 507-510, 1985.
  • G.K. Paul, A. Bhaumik, A. Patra and S. Bera, “Enhanced Photo-Electric Response of ZnO/Polyaniline Layer-by-Layer Self-Assembled Films”, Materials Chemistry and Physics, Vol. 106, No. 2-3, pp. 360-363, 2007.
  • Henrik Fabricius, Torben Skettrup and Paul Bisgaard, “Ultraviolet Detectors in Thin Sputtered ZnO Films”, Applied Optics, Vol. 25, No. 16, pp. 2764-2767, 1986.
  • Anderson Janotti and Chris G. Van de Walle, “Fundamentals of Zinc Oxide as a Semiconductor”, Reports on Progress in Physics, Vol. 72, No. 12, pp. 1-12, 2009.
  • Tae-Hyoung Moon, Min-Chang Jeong, Woong Lee and Jae-Min Myoung, “The Fabrication and Characterization of ZnO UV Detector”, Applied Surface Science, Vol. 240, No. 1-4, pp. 280-285, 2005.
  • Ozgur Umit, Daniel Hofstetter and Hadis Morkoc, “ZnO Devices and Applications: A Review of Current Status and Future Prospects”, Proceedings of the IEEE, Vol. 98, No. 7, pp. 1255-1268, 2010.
  • R.Romero, M.C. Lopez, D. Leinen, F. Martin and J.R. Ramos-Barrado, “Electrical Properties of n-ZnO/c-Si Heterojunction Prepared by Chemical Spray Pyrolysis”, Material Science and Engineering:B, Vol. 110, No. 1, pp. 87-93, 2004.
  • Shashikant Sharma and C. Periasamy, “Simulation Study and Performance Analysis of n-ZnO/p-Si Heterojunction Photodetector”, Journal of Electron Devices, Vol. 19, pp. 1633-1636, 2014.
  • Y.F Gu, X.M. Li, J.L.Zhao, W.D. Yu, X.D. Gao and C. Yang, “Visible-Blind Ultra-Violet Detector Based on n-ZnO/P-Si Heterojunction Fabricated by Plasma-assisted Pulsed Laser Deposition”, Solid State Communication, Vol. 143, No. 8-9, pp. 421-424, 2007.
  • Lichun Zhang, Fengzhou Zhao, Caifeng Wang, Feifei Wang, Ruizhi Huang and Qingshan Li, “Optoelectronic Characteristics of UV Photodetector based on GaN/ZnO Nanorods Pin Heterostructures”, Electronic Materials Letters, Vol. 11, No. 4, pp. 682-686, 2015.
  • Meng Ding, Dongxu Zhao, Bin Yao, Zhipeng Lid and Xijin Xu, “Ultraviolet Photodetector based on Heterojunction of n-ZnO Microwire/p-GaN Film”, RSC Advances, Vol. 5, No. 2, pp. 908-912, 2015.

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  • A High Gain and Low Noise CMOS Gilbert Mixer with Improved Linearity Based on MGTR and Switched Biasing Technique

Abstract Views: 380  |  PDF Views: 0

Authors

Shasanka Sekhar Rout
Department of Electronics and Telecommunication Engineering, Veer Surendra Sai University of Technology, Iceland
Kabiraj Sethi
Department of Electronics and Telecommunication Engineering, Veer Surendra Sai University of Technology, India

Abstract


This brief presents the design of an improved linear Gilbert mixer with high conversion gain and low noise figure by using multiple gated transistor (MGTR) and switched biasing technique. This mixer operates at a radio frequency (RF) of 2.4GHz with a local oscillator (LO) power of 5dBm in UMC 180nm process. The MGTR method is used to increase the linearity of the proposed mixer by the parallel combination of transconductance stage transistors and auxiliary transistors. The switched biasing technique is adopted for a current source instead of static biasing which lowers the noise figure. The integration of two techniques result in a conversion gain (CG) of 10.9dB and a noise figure (NF) of 7.2dB with the third order input intercept point (IIP3) of 10.79dBm. This proposed mixer circuit consumes 4.2mW power from a supply voltage of 1.8V.

Keywords


Conversion Gain, Gilbert Mixer, MGTR, Noise Figure, Static Biasing.

References