ICTACT Journal on Microelectronics

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Analysis of Complementary Beam Structured RF MEMS Switch for Wireless Applications


Affiliations
1 Department of Electronics Engineering, Pondicherry University, India
     

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This paper analysis the performance of a RF MEMS switch having a complementary beam structure operating at frequency ranging from 0 to 12GHz, which facilitates its application in the field of wireless mobile communication. This design is a modified cantilever beam forming a complementary structure with an easy fabrication process to implement. The switch is designed in form of a meander beam spring type in order to lower the spring constant there by achieving a relatively less pull-in voltage for actuation. The simulated results show a pull-in voltage of about 4V with the complementary cantilever beam structure. RF analysis shows a negligible insertion loss of -0.113dB and -7.181dB in the up-state of the switch from 0 to 12GHz. The isolation in the up-state was -57.62dB at 12GHz.

Keywords

RF MEMS, Switch, Cantilever Beam, Pull-in Voltage, Electrostatic Actuation, Coplanar Waveguide.
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  • Jiahui Wang, Jeroen Bielen, Cora Salm, Gijs Krijnen and Jurriaan Schmitz, “ On the Small-Signal Capacitance of RF MEMS Switches at Very Low Frequencies”, IEEE Journal of the Electron Devices Society, Vol. 4, No. 6, pp. 459-465, 2016.

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  • Analysis of Complementary Beam Structured RF MEMS Switch for Wireless Applications

Abstract Views: 367  |  PDF Views: 0

Authors

R. Raman
Department of Electronics Engineering, Pondicherry University, India
T. Shanmuganantham
Department of Electronics Engineering, Pondicherry University, India

Abstract


This paper analysis the performance of a RF MEMS switch having a complementary beam structure operating at frequency ranging from 0 to 12GHz, which facilitates its application in the field of wireless mobile communication. This design is a modified cantilever beam forming a complementary structure with an easy fabrication process to implement. The switch is designed in form of a meander beam spring type in order to lower the spring constant there by achieving a relatively less pull-in voltage for actuation. The simulated results show a pull-in voltage of about 4V with the complementary cantilever beam structure. RF analysis shows a negligible insertion loss of -0.113dB and -7.181dB in the up-state of the switch from 0 to 12GHz. The isolation in the up-state was -57.62dB at 12GHz.

Keywords


RF MEMS, Switch, Cantilever Beam, Pull-in Voltage, Electrostatic Actuation, Coplanar Waveguide.

References