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Design of Low Noise Amplifier (LNA) iusing Active and Passive Trans-Conductance Boosting Circuit


Affiliations
1 Department of Electrical and Electronics and Communication Engineering, Noida International University, India
     

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In high-speed networks and applications of wireless communication systems, the wideband data transmission system needs to receive the signal with low noise and low power. The Low Noise Amplifier (LNA) improves the signal strength and amplify the signal at the receiver side to reduce the noise and also must work in the high speed switching activity. In the paper work, a low power and low noise with inductor-less active and passive model of trans-conductance (Gm) enhancement system in the 22nm CMOS technology. By using this type of CMOS technology, it reduces the power consumption due to the update channel width and circuit design of Gm enhancement. This paper also highlights in the reduction of overall area consumption with the alignment and other connectivity of amplifier. This amplifier was tested in both e-band and w-band operating frequencies to validate the noise level in high frequency applications. The result analysis and comparison chart shows the performance level of proposed LNA model than other state-of-art models.

Keywords

Low Noise Amplifier, Trans-Conductance Enhancement, CMOS, High Frequency Applications.
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  • Design of Low Noise Amplifier (LNA) iusing Active and Passive Trans-Conductance Boosting Circuit

Abstract Views: 188  |  PDF Views: 0

Authors

Chahana Sharma
Department of Electrical and Electronics and Communication Engineering, Noida International University, India
Owais Ahmad Shah
Department of Electrical and Electronics and Communication Engineering, Noida International University, India

Abstract


In high-speed networks and applications of wireless communication systems, the wideband data transmission system needs to receive the signal with low noise and low power. The Low Noise Amplifier (LNA) improves the signal strength and amplify the signal at the receiver side to reduce the noise and also must work in the high speed switching activity. In the paper work, a low power and low noise with inductor-less active and passive model of trans-conductance (Gm) enhancement system in the 22nm CMOS technology. By using this type of CMOS technology, it reduces the power consumption due to the update channel width and circuit design of Gm enhancement. This paper also highlights in the reduction of overall area consumption with the alignment and other connectivity of amplifier. This amplifier was tested in both e-band and w-band operating frequencies to validate the noise level in high frequency applications. The result analysis and comparison chart shows the performance level of proposed LNA model than other state-of-art models.

Keywords


Low Noise Amplifier, Trans-Conductance Enhancement, CMOS, High Frequency Applications.