An Improved Nanoscale Quasi-Ballistic Double Gate (DG) Mosfet Model with Drain Bias Dependency on Critical Channel Length Near The Low Field Source Region by Semi-Empirical Approach

This work presents a physically accurate drain current model valid for Double Gate MOSFETs in the nanoscale regime. The model incorporates both diffusive and ballistic carrier transport on the basis of scattering theory. The significance of carrier scattering at the critical channel length near the low field source region is illustrated. The proposed model presents a semi-empirical approach to determine the critical channel length as a function of drain bias applicable for symmetric Double Gate MOSFETs. Fermi-Dirac statistics and Carrier degeneracy are considered in this work for optimal physical accuracy. The proposed quasi-ballistic model captures the signature effect of short channel devices and also exhibits good continuity in terms of drain current, terminal charges and capacitances. A relative analysis of the proposed quasi-ballistic model is done with other recent works.