ICTACT Journal on Microelectronics

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Gate Engineering of Double Gate In0.53Ga0.47As Tunnel FET


Affiliations
1 Department of Electronics and Communication Engineering, Saintgits College of Engineering, India
     

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Increased power-dissipation in upcoming generation digital systems are limited by supply voltage reductions. For such systems, transistors with lower Subthreshold Slopes are needed. Tunnel Field Effect Transistors (TFET), which works on the principle of band-to-band tunnelling, are supposed to be the possible solution for this problem. TFETs ON-current (ION) is usually very low, with the use of semiconductors with indirect and large bandgap, and high effective mass as silicon, where tunnelling probability is depressed. One solution to this problem is the use of III-V semiconductors like InAs, GaSb, GaAsSb, InxGa1-xAs etc. and structure of gate is another important factor. Double gate instead of a single gate structure will provide improvement in ION. Work function of the gate material also has a great impact. In this paper, a study of the impact of In0.53Ga0.47As channel material, gate structure, work function and high-k dielectric for gate for TFET using Cogenda VTCAD is presented.

Keywords

Band to Band Tunnelling, Double Gate TFET, III-V Semiconductors, High-k Dielectric.
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  • Gate Engineering of Double Gate In0.53Ga0.47As Tunnel FET

Abstract Views: 246  |  PDF Views: 0

Authors

C. S. Praveen
Department of Electronics and Communication Engineering, Saintgits College of Engineering, India
Ajith Ravindran
Department of Electronics and Communication Engineering, Saintgits College of Engineering, India
Shajimon K. John
Department of Electronics and Communication Engineering, Saintgits College of Engineering, India
Susan Abe
Department of Electronics and Communication Engineering, Saintgits College of Engineering, India

Abstract


Increased power-dissipation in upcoming generation digital systems are limited by supply voltage reductions. For such systems, transistors with lower Subthreshold Slopes are needed. Tunnel Field Effect Transistors (TFET), which works on the principle of band-to-band tunnelling, are supposed to be the possible solution for this problem. TFETs ON-current (ION) is usually very low, with the use of semiconductors with indirect and large bandgap, and high effective mass as silicon, where tunnelling probability is depressed. One solution to this problem is the use of III-V semiconductors like InAs, GaSb, GaAsSb, InxGa1-xAs etc. and structure of gate is another important factor. Double gate instead of a single gate structure will provide improvement in ION. Work function of the gate material also has a great impact. In this paper, a study of the impact of In0.53Ga0.47As channel material, gate structure, work function and high-k dielectric for gate for TFET using Cogenda VTCAD is presented.

Keywords


Band to Band Tunnelling, Double Gate TFET, III-V Semiconductors, High-k Dielectric.

References